[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Xu et al., 2024 - Google Patents

Higher Order Mode Elimination for SAW Resonators Based on LiNbO $ _ {3} $/SiO $ _ {2} $/poly-Si/Si Substrate by Si Orientation Optimization

Xu et al., 2024

Document ID
11285375588171849471
Author
Xu H
Fu S
Su R
Liu P
Xiao B
Zhang S
Wang R
Song C
Zeng F
Wang W
Pan F
Publication year
Publication venue
Journal of Microelectromechanical Systems

External Links

Snippet

Lithium-niobate-on-insulator (LNOI) platform has emerged as a promising solution for fabricating wideband and low-loss surface acoustic wave (SAW) filters. However, it simultaneously excites higher order modes, causing out-of-band (OoB) spurious responses …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezo-electrical layers on not-piezo- electrical substrate
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezo-electric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezo-electric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezo-electric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02637—Details concerning reflective or coupling arrays
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02062—Details relating to the vibration mode
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/562—Monolithic crystal filters comprising a ceramic piezoelectric layer
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezo-electric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezo-electric or electrostrictive material having a single resonator
    • H03H9/177—Constructional features of resonators consisting of piezo-electric or electrostrictive material having a single resonator of the energy-trap type
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezo-electric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves

Similar Documents

Publication Publication Date Title
Shen et al. High-performance surface acoustic wave devices using LiNbO 3/SiO 2/SiC multilayered substrates
Su et al. Wideband and low-loss surface acoustic wave filter based on 15° YX-LiNbO₃/SiO₂/Si structure
Kadota et al. Surface acoustic wave resonators with hetero acoustic layer (HAL) structure using lithium tantalate and quartz
JP7051690B2 (en) Induced surface acoustic wave device that results in spurious mode removal
Hashimoto et al. Recent development of temperature compensated SAW devices
Naumenko High-velocity non-attenuated acoustic waves in LiTaO3/quartz layered substrates for high frequency resonators
Yang et al. Surface-acoustic-wave devices based on lithium niobate and amorphous silicon thin films on a silicon substrate
Xu et al. Large-range spurious mode elimination for wideband SAW filters on LiNbO₃/SiO₂/Si platform by LiNbO₃ cut angle modulation
Wu et al. Exploring low-loss surface acoustic wave devices on heterogeneous substrates
Xu et al. SAW filters on LiNbO 3/SiC heterostructure for 5G n77 and n78 band applications
Zhang et al. High-performance acoustic wave devices on LiTaO 3/SiC hetero-substrates
Zheng et al. Near 5-GHz Longitudinal Leaky Surface Acoustic Wave Devices on LiNbO $ _ {3} $/SiC Substrates
Su et al. 5.9 GHz longitudinal leaky SAW filter with FBW of 9.2% and IL of 1.8 dB using LN/quartz structure
Shen et al. SAW filters with excellent temperature stability and high power handling using LiTaO 3/SiC bonded wafers
Zhang et al. High Frequency, Low Loss and Low TCF Acoustic Devices on LiTaO 3-on-SiC Substrate
Miura et al. Temperature compensated LiTaO/sub 3//sapphire bonded SAW substrate with low loss and high coupling factor suitable for US-PCS application
Zhou et al. A 6.1 GHz wideband solidly-mounted acoustic filter on heterogeneous substrate for 5G front-ends
Su et al. Scaling surface acoustic wave filters on LNOI platform for 5G communication
Zhou et al. Ultrawide-band SAW devices using SH0 mode wave with increased velocity for 5G front-ends
He et al. Spurious mitigation of layered surface acoustic wave resonators with double-busbar configuration using 42° YX-lithium tantalate thin plate
Xiao et al. Inherent Suppression of Transverse Modes on LiTaO $ _ {\text {3}} $/AT-Quartz SAW Devices
Guo et al. Hetero Acoustic Layer Surface Acoustic Wave Resonator Composed of LiNbO 3 and Quartz
Hsu et al. Harnessing acoustic dispersions in YX-LN/SiO 2/Si SH-SAW resonators for electromechanical coupling optimization and Rayleigh mode suppression
Zhang et al. Ultra-high Q of 11000 in surface acoustic wave resonators by dispersive modulation
Miura et al. Temperature compensated LiTaO3/sapphire SAW substrate for high power applications