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Ramanathan et al., 2020 - Google Patents

Not all GaN transistors are built equal: The benefits of vertical GaN-on-GaN

Ramanathan et al., 2020

Document ID
10873917442635012349
Author
Ramanathan D
Coles C
Meier W
Publication year
Publication venue
PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

External Links

Snippet

The semiconductor industry has been endorsing GaN for many years as the breakthrough innovation in power electronics. The reality however has not met the industry expectations and it is now settling down from the previous hypes. This paper describes the benefits of …
Continue reading at ieeexplore.ieee.org (other versions)

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