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Ortiz et al., 2002 - Google Patents

High quality-low temperature aluminum oxide films deposited by ultrasonic spray pyrolysis

Ortiz et al., 2002

Document ID
1039485410284190965
Author
Ortiz A
Alonso J
Publication year
Publication venue
Journal of Materials Science: Materials in Electronics

External Links

Snippet

High quality aluminum oxide thin films have been prepared at relatively low substrate temperatures using aluminum acetylacetonate as source material. The structural properties were analyzed by ellipsometry and infrared spectroscopy. The electrical integrity was …
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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