Zhang et al., 2020 - Google Patents
Epitaxial fabrication of monolayer copper arsenide on Cu (111)Zhang et al., 2020
View PDF- Document ID
- 9061614044260820152
- Author
- Zhang S
- Song Y
- Li J
- Wang Z
- Liu C
- Wang J
- Gao L
- Lu J
- Zhang Y
- Lin X
- Pan J
- Du S
- Gao H
- Publication year
- Publication venue
- Chinese Physics B
External Links
Snippet
We report the epitaxial growth of monolayer copper arsenide (CuAs) with a honeycomb lattice on Cu (111) by molecular beam epitaxy (MBE). Scanning tunneling microscopy (STM), low energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and …
- 239000010949 copper 0 title abstract description 59
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B31/00—Carbon; Compounds thereof
- C01B31/02—Preparation of carbon; Purification; After-treatment
- C01B31/04—Graphite, including modified graphite, e.g. graphitic oxides, intercalated graphite, expanded graphite or graphene
- C01B31/0438—Graphene
- C01B31/0446—Preparation
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Enriquez et al. | Silicene structures on silver surfaces | |
| Bampoulis et al. | Germanene termination of Ge2Pt crystals on Ge (110) | |
| Zhong et al. | Metastable phases of 2D boron sheets on Ag (1 1 1) | |
| Xu et al. | Topical review: recent progress of charge density waves in 2D transition metal dichalcogenide-based heterojunctions and their applications | |
| Sone et al. | Epitaxial growth of silicene on ultra-thin Ag (111) films | |
| Jamgotchian et al. | Growth of silicene layers on Ag (111): unexpected effect of the substrate temperature | |
| Yamada-Takamura et al. | Progress in the materials science of silicene | |
| Märkl et al. | Engineering multiple topological phases in nanoscale Van der Waals heterostructures: realisation of α-antimonene | |
| Zhong et al. | Silicene on substrates: A theoretical perspective | |
| Bafekry et al. | Band-gap engineering, magnetic behavior and Dirac-semimetal character in the MoSi2N4 nanoribbon with armchair and zigzag edges | |
| Rehman et al. | Topology and ferroelectricity in group-V monolayers | |
| Zhang et al. | Quantum anomalous Hall effect in real materials | |
| Wang et al. | Electronic properties of SnTe-class topological crystalline insulator materials | |
| Dähne et al. | Metallic rare-earth silicide nanowires on silicon surfaces | |
| Jaroch et al. | Layered heterostructure of planar and buckled phases of silicene | |
| Yin et al. | Hydrogen-assisted post-growth substitution of tellurium into molybdenum disulfide monolayers with tunable compositions | |
| Liu et al. | Epitaxial growth of monolayer PdTe2 and patterned PtTe2 by direct tellurization of Pd and Pt surfaces | |
| Khan et al. | First-principles computational exploration of ferromagnetism in monolayer GaS via substitutional doping | |
| Dong et al. | Formation of two-dimensional AgTe monolayer atomic crystal on Ag (111) substrate | |
| Jia et al. | Epitaxial growth of TiSe2/TiO2 heterostructure | |
| Zhang et al. | Investigation of edge states in artificial graphene nano-flakes | |
| Göhler et al. | Charge transfer in (PbSe) 1+ δ (NbSe2) 2 and (SnSe) 1+ δ (NbSe2) 2 ferecrystals investigated by photoelectron spectroscopy | |
| Liang et al. | Substrates and interlayer coupling effects on Mo1− xWxSe2 alloys | |
| Bachmatiuk et al. | Chemical vapor deposition of twisted bilayer and few-layer MoSe2 over SiO x substrates | |
| Yan et al. | Charging effect at grain boundaries of MoS2 |