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Ryu et al., 2011 - Google Patents

Thin-body N-face GaN transistor fabricated by direct wafer bonding

Ryu et al., 2011

Document ID
802300226174514627
Author
Ryu K
Roberts J
Piner E
Palacios T
Publication year
Publication venue
IEEE electron device letters

External Links

Snippet

This letter presents a method to fabricate thin-body N-face GaN-on-insulator-on-Si (100) wafers. These new wafers are promising to increase the carrier confinement and reduce the contact resistance in AlGaN/GaN high electron mobility transistors (HEMTs). In the reported …
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