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Hao et al., 2014 - Google Patents

Pulsed metal organic chemical vapor deposition of InAlN-based heterostructures and its application in electronic devices

Hao et al., 2014

Document ID
7741434182083276949
Author
Hao Y
Xue J
Zhang J
Publication year
Publication venue
Chinese Science Bulletin

External Links

Snippet

As a promising group III-nitride semiconductor material, InAlN ternary alloy has been attracted increasing interest and widespread research efforts for optoelectronic and electronic applications in the last 5 years. Following a literature survey of current status and …
Continue reading at link.springer.com (other versions)

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