[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Wassermann et al., 1970 - Google Patents

Epitaxy of gold evaporated onto polar surfaces of ZnO at 20 K

Wassermann et al., 1970

Document ID
7199682157651931288
Author
Wassermann E
Polacek K
Publication year
Publication venue
Applied Physics Letters

External Links

Snippet

Gold films (200–500 Å) have been evaporated onto air‐and vacuum‐cleaved polar surfaces of ZnO. While the films grown on the air‐cleaved surfaces are polycrystalline in a temperature range from 20 to about 450° K, the films grown on the vacuum‐cleaved …
Continue reading at pubs.aip.org (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/24Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
    • H01L39/2419Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof the superconducting material comprising copper oxide
    • H01L39/2422Processes for depositing or forming superconductor layers
    • H01L39/2454Processes for depositing or forming superconductor layers characterised by the substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed material
    • C30B23/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/922Static electricity metal bleed-off metallic stock

Similar Documents

Publication Publication Date Title
Cho Morphology of epitaxial growth of GaAs by a molecular beam method: The observation of surface structures
Weller et al. Preparation of remanently ferromagnetic Gd (0001)
Dubowski et al. Epitaxial growth of (100) CdTe on (100) GaAs induced by pulsed laser evaporation
Murr et al. Effects of vacuum environment on the sub-structure of evaporated FCC metal films
US5080753A (en) Laser deposition of crystalline boron nitride films
Asano et al. Flattening the surface of CaF2/Si (100) structures by post-growth annealing
Wassermann et al. Epitaxy of gold evaporated onto polar surfaces of ZnO at 20 K
Furusawa et al. In situ analysis of the room-temperature epitaxial growth of CeO 2 ultrathin films on Si (111) by coaxial impact-collision ion scattering spectroscopy
Bosch et al. Molecular beam epitaxy of InSb (110)
Shiojiri et al. The structure of vacuum-deposited films of cadmium telluride
Koch et al. Atomically Smooth (111) Monocrystalline Metal Films Formed on NaCl
US5264296A (en) Laser depositon of crystalline boron nitride films
Wang et al. Molecular beam epitaxial growth and structural properties of DyBa2Cu3O7− y superconducting thin films
Motta et al. Iron disilicide growth on Si (111): a scanning tunneling microscopy investigation
Okuyama et al. Epitaxial and Amorphous-Crystalline Phase Transition Growth of Evaporated Te Films
Tu et al. Structural and electrical properties of lattice‐matched Ca0. 44Sr0. 56F2/GaAs structures grown by molecular beam epitaxy
Morita et al. An Ion-Sputtering Gun to Clean Crystal Surfaces In-Situ in an Ultra-High-Vacuum Electron Microscope
Voorhoeve et al. Kinetics and thermodynamics of thin‐film deposition by molecular beam methods. II. Nucleation, growth, and evaporation of cadmium on germanium single crystals
Wagner et al. Growth and characterization of lead telluride epitaxial layers
Barkai et al. Epitaxial growth of silicon and germanium films on CaF2/Si
Distler et al. Informational properties of interfacial metallic layers
Chou et al. The film/substrate orientation relationships of CdTe grown on Si and GaAs by low pressure metalorganic chemical vapour deposition
Fujita et al. Growth of GaSe layered compound on a GaAs (001) surface
Osaka et al. Epitaxial growth of tin thin films on a potassium chloride substrate
Shinohara et al. ICB deposition and epitaxial growth of GaAs thin films