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Martinez et al., 2024 - Google Patents

Sub-1K Cold-Electron Quantum Well Switching at Room Temperature

Martinez et al., 2024

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Document ID
576553939987374148
Author
Martinez A
Gothe P
Liou Y
Bhayde O
Gish J
Sangwan V
Rabel M
Rumende T
Gonzalez G
Jiang J
Cao Y
Darancet P
Meletis E
Hersam M
Koh S
Publication year
Publication venue
Nano Letters

External Links

Snippet

Quantum states can provide means to systematically manipulate the transport of electrons. Here we present electron transport across quasi-bound states of two heterogeneous quantum wells (QWs), where the transport of thermally excited electrons is blocked or …
Continue reading at www.researchgate.net (PDF) (other versions)

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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H01L29/40—Electrodes; Multistep manufacturing processes therefor
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