Ma et al., 2014 - Google Patents
Feasibility test of spray-coating method for patterning of vapor phase-polymerized poly (3, 4-ethylenedioxythiophene) thin filmMa et al., 2014
- Document ID
- 5699965564757332505
- Author
- Ma F
- Boo J
- Sohn H
- Kim S
- Publication year
- Publication venue
- Materials Research Bulletin
External Links
Snippet
In this study, spray-coating has been opted to prepare patterned Poly (3, 4- ethylenedioxythiophene)(PEDOT) electrodes for an organic thin film transistor (OTFT). The conducting polymer was grown via the vapor phase polymerization (VPP) method. The film …
- 229920001609 Poly(3,4-ethylenedioxythiophene) 0 title abstract description 48
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- H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
- H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
- H01L51/0508—Field-effect devices, e.g. TFTs
- H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
- H01L51/0545—Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
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- H01L51/0034—Organic polymers or oligomers
- H01L51/0035—Organic polymers or oligomers comprising aromatic, heteroaromatic, or arrylic chains, e.g. polyaniline, polyphenylene, polyphenylene vinylene
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