[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Severiano Carrillo et al., 2021 - Google Patents

Structural properties of porous silicon obtained with laser photoetching assisted by computerized numeric control

Severiano Carrillo et al., 2021

Document ID
5212093930881607714
Author
Severiano Carrillo F
López Gayou V
García Salgado G
Delgado Macuil R
Carlos Ramírez N
Publication year
Publication venue
Journal of Laser Applications

External Links

Snippet

This study presents the preparation of porous silicon (PS) using the photoetching technique. The light source was a laser with a 405 nm wavelength. Hydrofluoric acid, hydrogen peroxide, and ethanol were used in the process. An approach to forming PS in a selected …
Continue reading at pubs.aip.org (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies

Similar Documents

Publication Publication Date Title
Berger et al. High photocurrent conversion efficiency in self-organized porous WO3
Lin et al. Photoluminescence origins of the porous silicon nanowire arrays
US10529498B2 (en) Nanowires of organic-inorganic perovskites
Fraser et al. Selective phase growth and precise-layer control in MoTe2
Fakhri et al. Thermal oxidation effects on physical properties of CuO2 thin films for optoelectronic application
Kashyap et al. Comparative study of quantum confinements effect present in Silicon Nanowires using absorption and Raman spectroscopy
Omar et al. Stiffness properties of porous silicon nanowires fabricated by electrochemical and laser-induced etching
Li et al. Fabrication of single-crystal silicon nanotubes with sub-10 nm walls using cryogenic inductively coupled plasma reactive ion etching
Kopani et al. Effect of etching time in hydrofluoric acid on the structure and morphology of n-type porous silicon
Imamura et al. Ultra-low reflectivity polycrystalline silicon surfaces formed by surface structure chemical transfer method
Chaliyawala et al. Effective light polarization insensitive and omnidirectional properties of Si nanowire arrays developed on different crystallographic planes
Wu et al. Photo-induced exfoliation of monolayer transition metal dichalcogenide semiconductors
Lei et al. Synthesis of vertically-aligned large-area MoS2 nanofilm and its application in MoS2/Si heterostructure photodetector
Das et al. Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties
Seredin et al. Effect of combination of etching modes on the design, structural and optical properties of the compliant substrates based on porous silicon
Prajapati et al. Opportunities for enhanced omnidirectional broadband absorption of the solar radiation using deep subwavelength structures
Severiano Carrillo et al. Structural properties of porous silicon obtained with laser photoetching assisted by computerized numeric control
Adhila et al. Effect of inhomogeneous mesoporosity and defects on the luminescent properties of slanted silicon nanowires prepared by facile metal-assisted chemical etching
Yuan et al. A robust approach to fabricate CZTSSe absorber layer for solar cells via a self-selenizations process conducted by concentrated selenium solution
Banerjee et al. Phonon processes in vertically aligned silicon nanowire arrays produced by low-cost all-solution galvanic displacement method
Bhujel et al. Synthesis and characterization of silicon nanowires by electroless etching
Boucherif et al. Near-infrared emission from mesoporous crystalline germanium
Hameed et al. Study the effect of changing the etching current in a Si nanostructure to improve the spectral sensitivity of the detector
Wang et al. Maskless fabrication of large scale Si nanohole array via laser annealed metal nanoparticles catalytic etching for photovoltaic application
Karbassian et al. Luminescent porous silicon prepared by reactive ion etching