Orji et al., 2007 - Google Patents
Progress on implementation of a reference measurement system based on a critical-dimension atomic force microscopeOrji et al., 2007
- Document ID
- 4915076864341350160
- Author
- Orji N
- Dixson R
- Martinez A
- Bunday B
- Allgair J
- Vorburger T
- Publication year
- Publication venue
- Journal of Micro/Nanolithography, MEMS and MOEMS
External Links
Snippet
The National Institute of Standards and Technology (NIST) and SEMATECH are working to address traceability issues in semiconductor dimensional metrology. In semiconductor manufacturing, many of the measurements made in the fab are not traceable to the SI unit of …
- 238000005259 measurement 0 title abstract description 85
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Exposure apparatus for microlithography
- G03F7/70483—Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
- G03F7/70616—Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
- G03F7/70625—Pattern dimensions, e.g. line width, profile, sidewall angle, edge roughness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation not covered by G01N21/00 or G01N22/00, e.g. X-rays or neutrons by transmitting the radiation through the material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Orji et al. | Progress on implementation of a reference measurement system based on a critical-dimension atomic force microscope | |
Dai et al. | Comparison of line width calibration using critical dimension atomic force microscopes between PTB and NIST | |
Dixson et al. | Traceable calibration of a critical dimension atomic force microscope | |
Orji et al. | Transmission electron microscope calibration methods for critical dimension standards | |
Mochi et al. | Open-source software for SEM metrology | |
Dai et al. | Comparison of EUV photomask metrology between CD-AFM and TEM | |
Dixson et al. | Implementation of reference measurement system using cd-afm | |
Gin et al. | Inline metrology of high aspect ratio hole tilt and center line shift using small-angle x-ray scattering | |
Takamasu et al. | Linewidth roughness of advanced semiconductor features using focused ion beam and planar-transmission electron microscope as reference metrology | |
Agocs et al. | Scatterometry reference standards to improve tool matching and traceability in lithographical nanomanufacturing | |
Novikov | Test Object for SEM Calibration: 2. Correlation Analysis of SEM Signals | |
Orji et al. | Progress on implementation of a CD-AFM-based reference measurement system | |
Orji et al. | Measurement traceability and quality assurance in a nanomanufacturing environment | |
Zhang et al. | Solving next generation (1X node) metrology challenges using advanced CDSEM capabilities: tilt, high energy and backscatter imaging | |
Cordes et al. | Sidewall slope sensitivity of critical dimension atomic force microscopy | |
Dixson et al. | Comparison and uncertainties of standards for critical dimension atomic force microscope tip width calibration | |
Weisbuch et al. | Bringing SEM-contour based OPC to production | |
Kalhor et al. | Impact of pixel-dose optimization on pattern fidelity for helium ion beam lithography on EUV resist | |
Jo et al. | SEM ADI on device overlay: the advantages and outcome | |
Mack et al. | CD-SEM algorithm optimization for line roughness metrology (Conference Presentation) | |
Bunday et al. | Small feature accuracy challenge for CD-SEM metrology: physical model solution | |
Bahrenberg et al. | Laboratory-based EUV spectroscopy for the characterization of thin films, membranes and nanostructured surfaces | |
Rana et al. | Machine learning and predictive data analytics enabling metrology and process control in IC fabrication | |
Potzick | Accuracy in integrated circuit dimensional measurements | |
Lakcher et al. | Advanced metrology by offline SEM data processing |