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Collaert, 2024 - Google Patents

Gallium nitride technologies for wireless communication

Collaert, 2024

Document ID
4886370180518412167
Author
Collaert N
Publication year
Publication venue
New Materials and Devices Enabling 5G Applications and Beyond

External Links

Snippet

This chapter discusses the applications, benefits, and challenges of using gallium nitride (GaN) technology in electronic devices. GaN is a compound semiconductor material that possesses a wide bandgap and high breakdown voltage, making it suitable for high-power …
Continue reading at www.sciencedirect.com (other versions)

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    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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