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Optica Publishing Group
Conferences > OFC > 2015 > W2A > W2A.29

Germanium-tin on Silicon p-i-n Photodiode with Low Dark Current due to Sidewall Surface Passivation

Yuan Dong, Wei Wang, Dian Lei, Xiao Gong, Qian Zhou, Shuh Ying Lee, Wan Khai Loke, Soon-Fatt Yoon, Gengchiau Liang, and Yee-Chia Yeo

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Abstract

We demonstrate that the surface leakage current of a Ge0.95Sn0.05/Si p-i-n photodiode can be significantly reduced by ~two orders by Si surface passivation. Furthermore, a dark current density of 0.073A/cm2 (Vbias= −1 V) is achieved.

© 2015 Optical Society of America

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