HS25N06DA N沟道60V,MOSFET

圳市硕实科技有限公司供原装HOMSEMI MOSFET HS25N06DA TO252封装如有需要可致电联系0755-83040406

Description

The HS25N06DA is the N-Channel logic enhancement mode power field effect transistors are produced using high cell
density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These
devices are particularly suited for low voltage application.

Features
VDS 60V
RDS(on)Max. 35mΩ
ID 25A
●High density cell design for ultra low
RDS(on)
● Excellent package for good heat
Pin configuration dissipation
Order Number Package
HS25N06DA TO-252

Maximum Ratings (Tc = 25℃ unless otherwise noted*)

Parameter Symbol Ratings Units
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current Tc=25℃ ID 25* A
Tc=100℃ 14* A
Pulsed Drain Current IDM 60 A
Power Dissipation Tc=25℃ PD 45 W
Derate above 25℃ 0.3
Single pulse avalanche energy（note 1） EAS 72
Operating Junction and Storage Temperature Range TJ,Tstg -55~+175 ℃
* Dran current limited by maximum junction temperature.
1：EAS condition:L=0.5mH, VDD=30V, RG=25Ω,TJ=25℃.
Thermal Characteristics
Parameter Symbol Ratings Units
Thermal resistance, case to sink typ. RthCS 0.5 ℃/W
Thermal resistance junction to case. RthJC 3.3 ℃/W
Thermal resistance junction to ambient. RthJA 110 ℃/W

3 TO-252