Solid-state storage devices and the block layer

Posted Oct 7, 2010 12:38 UTC (Thu) by nix (subscriber, #2304)
In reply to: Solid-state storage devices and the block layer by jzbiciak
Parent article: Solid-state storage devices and the block layer

NAND flash has a notion of "sequential page read" versus "random page read". If you're truly reading random bytes a'la DRAM w/out cache, you'll see noticeably slower performance if the two reads are in different pages.

That sounds just like normal RAM: if you don't have to specify the row *and* column, you save on one CAS/RAS select cycle. Of course this is hidden behind the MMU and CPU cache management code and so on, so we don't often notice it, but it is there.