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- articleApril 2016
A resistive sensing and dual-slope ADC based smart temperature sensor
Analog Integrated Circuits and Signal Processing (KLU-ALOG), Volume 87, Issue 1Pages 57–63https://doi.org/10.1007/s10470-016-0709-1Modern temperature sensors are applied in industrial electronics where the operating temperature is beyond 150 °C. Existing smart temperature sensors normally support an operating temperature below 125 °C. This paper describes a low-complex high-...
- articleFebruary 2016
A 9-bit successive approximation ADC in SOI CMOS operating up to 300źC
International Journal of Circuit Theory and Applications (IJCTA), Volume 44, Issue 2Pages 418–427https://doi.org/10.1002/cta.2084Industrial electronics are in great demand for oil and gas exploration, well drilling, and automotive applications where the operating temperature goes beyond 200ï źC. Circuit designs using conventional complementary metal-oxide semiconductor CMOS ...
- ArticleApril 2012
Analysis of Quantum Effects in Nano-scaled Double-Gate SOI CMOS
When the feature size of devices is reduced to tens of nanometers. it is necessary to simulate devices using quantum transport models. In this paper, the crriers' transport mechanism in nano-scale MOS device is analyzed, using Green's Function to ...
- articleFebruary 2011
Impact of nitrogen post deposition annealing on hafnium zirconate dielectrics for 32nm high-performance SOI CMOS technologies
- T. Kelwing,
- A. Naumann,
- M. Trentzsch,
- F. Graetsch,
- B. Bayha,
- L. Herrmann,
- B. Trui,
- D. Rudolph,
- D. Lipp,
- G. Krause,
- R. Carter,
- R. Stephan,
- P. Kücher,
- W. Hansch
Microelectronic Engineering (MCEE), Volume 88, Issue 2Pages 141–144https://doi.org/10.1016/j.mee.2010.09.019The impact of either N"2 or N"2/O"2 Post Deposition Annealing (PDA) and Post Work Function Annealing (PWFA) combinations as well as single N"2 or N"2/O"2 PWFA with different process parameters on HfZrO"4 has been investigated in detail for high ...
- articleDecember 2005
UHF RF front-end circuits in 0.35-µm silicon on insulator (SOI) CMOS
Analog Integrated Circuits and Signal Processing (KLU-ALOG), Volume 45, Issue 3Pages 231–245https://doi.org/10.1007/s10470-005-4953-zIn this work, design and measurement results of UHF RF frontend circuits to be used in low-IF and subsampling receiver architectures are presented. We report on three low noise amplifiers (LNA) (i) single-ended (ii) differential (iii) high-gain ...
- ArticleAugust 2003
A 0.123 mW 7.25 GHz static frequency divider by 8 in a 120-nm SOI technology
- Jean-Olivier Plouchart,
- Jonghae Kim,
- Hector Recoules,
- Noah Zamdmer,
- Yue Tan,
- Melanie Sherony,
- Asit Ray,
- Lawrence Wagner
ISLPED '03: Proceedings of the 2003 international symposium on Low power electronics and designPages 440–442https://doi.org/10.1145/871506.871615A static frequency divider by 8 was fabricated in a 120 nm SOI technology. The highest operation frequency achieved is 8.25 GHz at 1.5 V power supply. The lowest core power consumption achieved is 0.016 mW at 4 GHz when the lowest operating voltage ...
- ArticleAugust 2003
A power-optimized widely-tunable 5-GHz monolithic VCO in a digital SOI CMOS technology on high resistivity substrate
- Jonghae Kim,
- Jean-Olivier Plouchart,
- Noah Zamdmer,
- Melanie Sherony,
- Yue Tan,
- Meeyoung Yoon,
- Robert Trzcinski,
- Mohamed Talbi,
- John Safran,
- Asit Ray,
- Lawrence Wagner
ISLPED '03: Proceedings of the 2003 international symposium on Low power electronics and designPages 434–439https://doi.org/10.1145/871506.871614This paper describes the design and technology optimization of power-efficient monolithic VCOs with wide tuning range. Four 5-GHz LC-tank VCOs were fabricated in a 0.12-μm SOI CMOS technology that was not enhanced for RF applications. High and regular ...