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- articleApril 2012
Competitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies
- R. Augur,
- C. Child,
- J. H. Ahn,
- T. J. Tang,
- L. Clevenger,
- D. Kioussis,
- H. Masuda,
- R. Srivastava,
- Y. Oda,
- H. Oguma,
- R. Quon,
- B. Kim,
- H. Sheng,
- S. Hirooka,
- R. Gupta,
- A. Thomas,
- S. M. Singh,
- Q. Fang,
- R. Schiwon,
- B. Hamieh,
- E. Wornyo,
- S. Allen,
- E. Kaltalioglu,
- G. Ribes,
- G. Zhang,
- T. Fryxell,
- A. Ogino,
- E. Shimada,
- H. Aizawa,
- H. Minda,
- S. O. Kim,
- T. Oki,
- K. Fujii,
- M. Pallachalil,
- T. Takewaki,
- C. K. Hu,
- B. Sundlof,
- D. Permana,
- T. Bolom,
- B. Engel,
- C. Labelle,
- B. Sapp,
- T. Nogami,
- A. Simon,
- H. Shobha,
- S. Gates,
- E. T. Ryan,
- G. Bonilla,
- T. Daubenspeck,
- T. Shaw,
- G. Osborne,
- A. Grill,
- D. Edelstein,
- D. Restaino,
- S. Molis,
- T. Spooner,
- P. Ferreira,
- G. Biery,
- R. Sampson
A cost effective 28nm CMOS Interconnect technology is presented for 28nm node high performance and low power applications. Full entitlement of ultra low-k (ULK) inter-level dielectric is enabled. Copper wiring levels can be combined up to a total of 11 ...
- ArticleOctober 2009
HELIOS system: a team of tracked robots for special urban search and rescue operations
- M. Guarnieri,
- R. Kurazume,
- H. Masuda,
- T. Inoh,
- K. Takita,
- P. Debenest,
- R. Hodoshima,
- E. Fukushima,
- S. Hirose
IROS'09: Proceedings of the 2009 IEEE/RSJ international conference on Intelligent robots and systemsPages 2795–2800Fire brigades and special agencies are often demanded to operate for search and aid of human lives in extremely dangerous scenarios. It is very important to first verify the safety of the environment and to obtain remotely a clear image of the scenario ...
- ArticleMay 2009
HELIOS carrier: tail-like mechanism and control algorithm for stable motion in unknown environments
ICRA'09: Proceedings of the 2009 IEEE international conference on Robotics and AutomationPages 2106–2111Mobile platforms when negotiating steps and stairs should be able to control theirs posture in order to avoid sudden tilting or falls. In particular, when considering applications for search and rescue operations where users have a very limited time of ...
- research-articleNovember 2006
A New Design-Centering Methodology for VLSI Device Development
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (TCADICS), Volume 6, Issue 3Pages 452–461https://doi.org/10.1109/TCAD.1987.1270292VLSI yield optimization and design centering are two key interests in the development of submicron VLSI's. Accordingly, we have developed a new design automation technique based on simulation CAD tools. The features of this methodology are great ...
- research-articleNovember 2006
A Two-Dimensional Integrated Process Simulator: SPIRIT-I
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (TCADICS), Volume 6, Issue 3Pages 439–445https://doi.org/10.1109/TCAD.1987.1270290A new two-dimensional integrated process simulation system named SPIRIT-I (Simulation Processor for Integrated Representation of Impurity-profile and Topography-I) has been developed. This system includes elementary process simulators of deposition, ...
- research-articleNovember 2006
Analysis of MOSFET Capacitances and Their Behavior at Short-Channel Lengths Using an AC Device Simulator
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (TCADICS), Volume 6, Issue 3Pages 423–430https://doi.org/10.1109/TCAD.1987.1270288Intrinsic MOSFET capacitances are calculated using the three-dimensional ac device simulator CADDETH, and distributions of the internal ac currents are studied. The simulations clearly show the influence of velocity saturation. Finally short-channel ...
- research-articleNovember 2006
Three-Dimensional Device Simulator CADDETH with Highly Convergent Matrix Solution Algorithms
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (TCADICS), Volume 4, Issue 4Pages 482–488https://doi.org/10.1109/TCAD.1985.1270146A practical three-dimensional device simulator CADDETH (Computer Aided Device DEsign in THree dimensions) has been developed. Matrix solution methods appropriate to three-dimensional analyses have been devised. A vectorization ratio of 97 percent has ...
- research-articleNovember 2006
A submicrometer MOS transistor I - V model for circuit simulation
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (TCADICS), Volume 10, Issue 2Pages 161–170https://doi.org/10.1109/43.68403A MOSFET I - V model (MOSTSM) that is composed of simple analytical equations applicable down to a 0.5-ým MOSFET operation is proposed. This model provides enhanced performance with respect to gate electric field effects on channel conductance and ...
- research-articleNovember 2006
MOSTSM: a physically based charge conservative MOSFET model
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (TCADICS), Volume 7, Issue 12Pages 1229–1236https://doi.org/10.1109/43.16801Charge-conservative CV models for the MOSFET can be classified into two categories: a depletion charge model, which is accurate but complex, and a simplified charge model, which is less accurate but is very simple. The accuracy of the latter model is ...