|
For Full-Text PDF, please login, if you are a member of IEICE,
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
|
Novel Band-Reconfigurable High Efficiency Power Amplifier Employing RF-MEMS Switches
Atsushi FUKUDA Hiroshi OKAZAKI Tetsuo HIROTA Yasushi YAMAO
Publication
IEICE TRANSACTIONS on Electronics
Vol.E88-C
No.11
pp.2141-2149 Publication Date: 2005/11/01 Online ISSN:
DOI: 10.1093/ietele/e88-c.11.2141 Print ISSN: 0916-8516 Type of Manuscript: PAPER Category: Microwaves, Millimeter-Waves Keyword: band-switchable matching network, microelectro mechanical devices, multi-band, switches, power amplifiers,
Full Text: PDF(907.5KB)>>
Summary:
A novel scheme for a multi-band power amplifier (PA) that employs a low-loss reconfigurable matching network is presented and discussed. The matching network basically consists of a cascade of single-stub tuning circuits, in which each stub is connected to a transmission line via a Single-Pole-Single-Throw (SPST) switch. By controlling the on/off status of each switch, the matching network works as a band-switchable matching network. Based on a detailed analysis of the influence of non-ideal switches in the matching network, we conceived a new design perspective for the reconfigurable matching network that achieves low loss. A 900/1900-MHz dual-band, 1 W class PA is newly designed following the new design perspective, and fabricated with microelectro mechanical system (MEMS) SPST switches. Owing to the new design and sufficient characteristics of the MEMS switches, the dual-band PA achieves over 60% of the maximum power-added efficiency with an output power for each band exceeding 30 dBm. These results are comparable to the estimated results for a single-band PA. This shows that the proposed scheme provides a band-switchable highly efficient PA that has superior performance compared to the conventional multi-band PA that has a complex structure.
|
|
|