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"1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and ..."

Tania Roy et al. (2011)

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DOI: 10.1016/J.MICROREL.2010.09.022

access: closed

type: Journal Article

metadata version: 2024-10-06

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Tania Roy, Yevgeniy S. Puzyrev, En-xia Zhang, Sandeepan DasGupta, Sarah A. Francis, Daniel M. Fleetwood, Ronald D. Schrimpf, Umesh K. Mishra, Jim S. Speck, Sokrates T. Pantelides:
1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH₃-rich conditions. Microelectron. Reliab. 51(2): 212-216 (2011)

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