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"First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench ..."

K. Banerjee et al. (2021)

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DOI: 10.1109/IMW51353.2021.9439620

access: closed

type: Conference or Workshop Paper

metadata version: 2024-06-09

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K. Banerjee, Laurent Breuil, A. P. Milenin, M. Pak, J. Stiers, Sean R. C. McMitchell, L. Di Piazza, Geert Van den Bosch, Jan Van Houdt:
First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application. IMW 2021: 1-4

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