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Benoit Lambert
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2020 – today
- 2022
- [c3]Francesca Chiocchetta, Carlo De Santi
, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, Andrea Gerosa
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. IRPS 2022: 11 - [c2]Zhan Gao
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. IRPS 2022: 51-1
2010 – 2019
- 2017
- [j16]Jean-Guy Tartarin, O. Lazar, D. Saugnon, Benoit Lambert, C. Moreau, C. Bouexière, E. Romain-Latu, K. Rousseau, A. David, J.-L. Roux:
Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging. Microelectron. Reliab. 76-77: 344-349 (2017) - 2015
- [j15]M. Rzin, Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, Laurent Brunel, Benoit Lambert:
Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs. Microelectron. Reliab. 55(9-10): 1672-1676 (2015) - [j14]O. Lazar, Jean-Guy Tartarin, Benoit Lambert, C. Moreau, J.-L. Roux:
Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies. Microelectron. Reliab. 55(9-10): 1714-1718 (2015) - [j13]James W. Pomeroy, Michael J. Uren
Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing. Microelectron. Reliab. 55(12): 2505-2510 (2015) - 2014
- [j12]Antonio Stocco, Simone Gerardin
Proton induced trapping effect on space compatible GaN HEMTs. Microelectron. Reliab. 54(9-10): 2213-2216 (2014) - [j11]Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini
Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications. Microelectron. Reliab. 54(9-10): 2237-2241 (2014) - 2013
- [j10]P. J. van der Wel, T. Rödle, Benoit Lambert, Hervé Blanck, Maximilian Dammann:
Qualification of 50 V GaN on SiC technology for RF power amplifiers. Microelectron. Reliab. 53(9-11): 1439-1443 (2013) - [j9]Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat:
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. Microelectron. Reliab. 53(9-11): 1450-1455 (2013) - [j8]S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau:
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. Microelectron. Reliab. 53(9-11): 1491-1495 (2013) - 2012
- [j7]Benoit Lambert, Nathalie Labat, Dominique Carisetti, Serge Karboyan, Jean-Guy Tartarin, Jim Thorpe, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Eddy Latu-Romain, Michel Mermoux:
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. Microelectron. Reliab. 52(9-10): 2184-2187 (2012) - [j6]Benoit Lambert, Jim Thorpe, Reza Behtash, Bernd Schauwecker, Franck Bourgeois, Helmut Jung, Joëlle Bataille, Patrick Mezenge, Cyril Gourdon, Catherine Ollivier, Didier Floriot, Hervé Blanck:
Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification. Microelectron. Reliab. 52(9-10): 2200-2204 (2012) - [c1]Laurent Brunel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat, Benoit Lambert:
Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements. ESSDERC 2012: 270-273 - 2010
- [j5]Mustapha Faqir, Mohsine Bouya
Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations. Microelectron. Reliab. 50(9-11): 1520-1522 (2010) - [j4]Benoit Lambert, G. Jonsson, J. Bataille, C. Ollivier, P. Mezenge, H. Derewonko, H. Thomas, D. Floriot, Hervé Blanck, C. Moreau:
Reliability of high voltage/high power L/S-band Hbt technology. Microelectron. Reliab. 50(9-11): 1543-1547 (2010)
2000 – 2009
- 2008
- [j3]Mohsine Bouya
Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques. Microelectron. Reliab. 48(8-9): 1366-1369 (2008) - 2002
- [j2]Nathalie Labat, Nathalie Malbert, Benoit Lambert, André Touboul, F. Garat, B. Proust:
Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. Microelectron. Reliab. 42(9-11): 1575-1580 (2002) - 2001
- [j1]Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, André Touboul, P. Huguet, R. Bonnet, G. Pataut:
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. Microelectron. Reliab. 41(9-10): 1573-1578 (2001)
Coauthor Index
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