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André Touboul
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2000 – 2009
- 2008
- [j17]M. L. Bourqui, Laurent Béchou, Olivier Gilard, Yannick Deshayes, Pamela Del Vecchio, L. S. How, F. Rosala, Yves Ousten, André Touboul:
Reliability investigations of 850 nm silicon photodiodes under proton irradiation for space applications. Microelectron. Reliab. 48(8-9): 1202-1207 (2008) - 2007
- [j16]Nathalie Labat, André Touboul:
Editorial. Microelectron. Reliab. 47(9-11): 1311-1312 (2007) - [j15]Mustapha Faqir, Giovanni Verzellesi
, Fausto Fantini
Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs. Microelectron. Reliab. 47(9-11): 1639-1642 (2007) - 2006
- [j14]Fabien Essely, Frédéric Darracq, Vincent Pouget, Mustapha Remmach, Felix Beaudoin, Nicolas Guitard, Marise Bafleur, Philippe Perdu, André Touboul, Dean Lewis:
Application of various optical techniques for ESD defect localization. Microelectron. Reliab. 46(9-11): 1563-1568 (2006) - [j13]A. Sozza
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. Microelectron. Reliab. 46(9-11): 1725-1730 (2006) - 2005
- [j12]Nicolas Guitard, Fabien Essely, David Trémouilles
Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure. Microelectron. Reliab. 45(9-11): 1415-1420 (2005) - [j11]Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean-Luc Muraro, F. Brasseau, D. Langrez:
Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. Microelectron. Reliab. 45(9-11): 1611-1616 (2005) - 2004
- [j10]Nathalie Labat, Nathalie Malbert, Cristell Maneux
Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors. Microelectron. Reliab. 44(9-11): 1361-1368 (2004) - [j9]Brice Grandchamp, Cristell Maneux
On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise. Microelectron. Reliab. 44(9-11): 1387-1392 (2004) - [j8]Fabien Essely, Corinne Bestory, Nicolas Guitard, Marise Bafleur, A. Wislez, E. Doche, Philippe Perdu, André Touboul, Dean Lewis:
Study of the ESD defects impact on ICs reliability. Microelectron. Reliab. 44(9-11): 1811-1815 (2004) - 2003
- [j7]Nathalie Labat, André Touboul:
Editorial. Microelectron. Reliab. 43(9-11): 1351-1352 (2003) - [j6]Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectron. Reliab. 43(9-11): 1713-1718 (2003) - [j5]J. C. Martin, Cristell Maneux
1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses. Microelectron. Reliab. 43(9-11): 1725-1730 (2003) - [j4]Mohamed Belhaj
High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects. Microelectron. Reliab. 43(9-11): 1731-1736 (2003) - 2002
- [j3]Nathalie Labat, Nathalie Malbert, Benoit Lambert, André Touboul, F. Garat, B. Proust:
Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. Microelectron. Reliab. 42(9-11): 1575-1580 (2002) - 2001
- [j2]Dean Lewis, Vincent Pouget, Thomas Beauchêne, Hervé Lapuyade, Pascal Fouillat, André Touboul, Felix Beaudoin, Philippe Perdu:
Front Side and Backside OBIT Mappings applied to Single Event Transient Testing. Microelectron. Reliab. 41(9-10): 1471-1476 (2001) - [j1]Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, André Touboul, P. Huguet, R. Bonnet, G. Pataut:
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. Microelectron. Reliab. 41(9-10): 1573-1578 (2001)
Coauthor Index
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