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Hong Zhu 0009
Person information
- affiliation: Hong Kong University of Science and Technology, Department of Electronic and Computer Engineering, Hong Kong
Other persons with the same name
- Hong Zhu — disambiguation page
- Hong Zhu 0001
— University of Electronic Science and Technology of China, School of Automation Engineering, Chengdu, China
- Hong Zhu 0002
- Hong Zhu 0003
- Hong Zhu 0004 — East China Normal University, College of Software, Shanghai Key Laboratory of Trustworthy Computing, Shanghai, China (and 1 more)
- Hong Zhu 0005
- Hong Zhu 0006
- Hong Zhu 0007
- Hong Zhu 0008
- Hong Zhu 0010 — China University of Mining and Technology, School of Information and Electrical Engineering, Xuzhou, China
- Hong Zhu 0011
- Hong Zhu 0012
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2010 – 2019
- 2015
- [c6]Hong Zhu, Volkan Kursun
2-Phase high-frequency clock distribution with SPLIT-IO dual-Vt repeaters for suppressed leakage currents. ISCAS 2015: 2932-2935 - 2014
- [j2]Hong Zhu, Volkan Kursun
A Comprehensive Comparison of Data Stability Enhancement Techniques With Novel Nanoscale SRAM Cells Under Parameter Fluctuations. IEEE Trans. Circuits Syst. I Regul. Pap. 61-I(5): 1473-1484 (2014) - [j1]Hong Zhu, Volkan Kursun
Novel Low-Leakage and High-Speed Triple-Threshold-Voltage Buffers With Skewed Inputs and Outputs. IEEE Trans. Circuits Syst. I Regul. Pap. 61-I(7): 2013-2021 (2014) - [c5]Hong Zhu, Volkan Kursun
Triple-threshold-voltage 9-transistor SRAM cell for data stability and energy-efficiency at ultra-low power supply voltages. ICM 2014: 176-179 - [c4]Hong Zhu, Volkan Kursun
A comprehensive comparison of superior triple-threshold-voltage 7-transistor, 8-transistor, and 9-transistor SRAM cells. ISCAS 2014: 2185-2188 - 2013
- [c3]Hong Zhu, Volkan Kursun
Novel dual-threshold-voltage energy-efficient buffers for driving large extrinsic load capacitance. ISCAS 2013: 3000-3003 - [c2]Hong Zhu, Volkan Kursun
Impact of process parameter and supply voltage fluctuations on multi-threshold-voltage seven-transistor static memory cells. ISQED 2013: 448-453 - 2011
- [c1]Hong Zhu, Volkan Kursun
Symmetrical triple-threshold-voltage nine-transistor SRAM circuit with superior noise immunity and overall electrical quality. ISOCC 2011: 333-336
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