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Shichang Zou
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2020 – today
- 2023
- [j34]Zhongyang Liu, Yuqiao Xie, Tao Xu, Qing Liu, Dawei Bi, Zhiyuan Hu, Shichang Zou, Zhengxuan Zhang:
A highly stable and low-cost 12T radiation hardened SRAM cell design for aerospace application. Int. J. Circuit Theory Appl. 51(8): 3938-3948 (2023) - [j33]Yuqiao Xie, Zhongyang Liu, Tao Xu, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou:
A novel high-precision single-event transient hardened voltage comparator design. Int. J. Circuit Theory Appl. 51(10): 4864-4878 (2023) - 2022
- [j32]Zhongyang Liu, Haineng Zhang, Jianwei Jiang, Yanjie Jia, Yuqiao Xie, Shichang Zou, Zhengxuan Zhang:
A High-Performance and Low-Cost Single-Event Multiple-Node-Upsets Resilient Latch Design. IEEE Trans. Very Large Scale Integr. Syst. 30(12): 1867-1877 (2022) - 2020
- [j31]Huilong Zhu, Dawei Bi, Xin Xie, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou:
Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET. IEICE Electron. Express 17(7): 20200001 (2020) - [j30]Xiaonian Liu, Lihua Dai, Pingliang Li, Shichang Zou:
Electrical performance of 130 nm PD-SOI MOSFET with diamond layout. Microelectron. J. 99: 104428 (2020) - [j29]Wenyi Zhu, Jianwei Jiang, Haineng Zhang, Yiran Xu, Jun Xiao, Guangjun Yang, Shichang Zou:
A Wide-Range-Supply-Voltage Sense Amplifier Circuit for Embedded Flash Memory. IEEE Trans. Circuits Syst. II Express Briefs 67-II(8): 1454-1458 (2020)
2010 – 2019
- 2019
- [j28]Wenyi Zhu, Jianwei Jiang, Dianpeng Lin, Jun Xiao, Guangjun Yang, Xiaoyun Li, Shichang Zou:
A charge pump system with new regulation and clocking scheme. IEICE Electron. Express 16(4): 20190005 (2019) - [j27]Xin Xie, Huilong Zhu, Mengying Zhang, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou:
Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer. IEICE Electron. Express 16(21): 20190454 (2019) - [j26]Zhaozhao Xu, Donghua Liu, Jun Hu, Feng Jin, Xinjie Yang, Wenting Duan, Wei Yue, Ziquan Fang, Wensheng Qian, Weiran Kong, Shichang Zou:
Demonstration of improvement of specific on-resistance versus breakdown voltage tradeoff for low-voltage power LDMOS. Microelectron. J. 88: 29-36 (2019) - [j25]Jianwei Jiang, Yiran Xu, Wenyi Zhu, Jun Xiao, Shichang Zou:
Quadruple Cross-Coupled Latch-Based 10T and 12T SRAM Bit-Cell Designs for Highly Reliable Terrestrial Applications. IEEE Trans. Circuits Syst. I Regul. Pap. 66-I(3): 967-977 (2019) - [c2]Jianwei Jiang, Dianpeng Lin, Jun Xiao, Shichang Zou:
Soft-Error-Tolerant Ultralow-Leakage 12T SRAM Bitcell Design. ICICDT 2019: 1-2 - 2018
- [j24]Dianpeng Lin, Yiran Xu, Xiaonian Liu, Wenyi Zhu, Lihua Dai, Mengying Zhang, Xiaoyun Li, Xin Xie, Jianwei Jiang, Huilong Zhu, Zhengxuan Zhang, Shichang Zou:
A novel highly reliable and low-power radiation hardened SRAM bit-cell design. IEICE Electron. Express 15(3): 20171129 (2018) - [j23]Zhiyuan Hu, Lihua Dai, Zhengxuan Zhang, Xiaoyun Li, Shichang Zou:
Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide. IEICE Electron. Express 15(4): 20171236 (2018) - [j22]Dianpeng Lin, Yiran Xu, Xiaoyun Li, Xin Xie, Jianwei Jiang, Jiangchuan Ren, Huilong Zhu, Zhengxuan Zhang, Shichang Zou:
A novel SEU tolerant memory cell for space applications. IEICE Electron. Express 15(17): 20180656 (2018) - [j21]Dianpeng Lin, Yiran Xu, Xiaoyun Li, Xin Xie, Jianwei Jiang, Jiangchuan Ren, Huilong Zhu, Zhengxuan Zhang, Shichang Zou:
A novel self-recoverable and triple nodes upset resilience DICE latch. IEICE Electron. Express 15(19): 20180753 (2018) - [j20]Zhaozhao Xu, Donghua Liu, Wei Xiong, Jun Hu, Wenting Duan, Hualun Chen, Wensheng Qian, Weiran Kong, Shichang Zou:
Investigation and impact of LDD variations on the drain disturb in normally-on SONOS NOR flash device. Microelectron. Reliab. 84: 157-162 (2018) - [j19]Yiran Xu, Wenyi Zhu, Jun Xiao, Guangjun Yang, Jian Hu, Shengbo Zhang, Mingyong Huang, Weiran Kong, Shichang Zou:
A 280-KBytes Twin-Bit-Cell Embedded NOR Flash Memory With a Novel Sensing Current Protection Enhanced Technique and High-Voltage Generating Systems. IEEE Trans. Circuits Syst. II Express Briefs 65-II(11): 1569-1573 (2018) - 2017
- [j18]Yiran Xu, Wenyi Zhu, Jun Xiao, Guangjun Yang, Jian Hu, Xiaoyun Li, Weiran Kong, Shichang Zou:
Area-efficient charge pump with local boost technique for embedded flash memory. IEICE Electron. Express 14(21): 20170944 (2017) - [j17]Ruofan Dai, Yunlong Zheng, Jun He, Weiran Kong, Shichang Zou:
A duplex current-reused CMOS LNA with complementary derivative superposition technique. Int. J. Circuit Theory Appl. 45(1): 110-119 (2017) - [j16]Xiaonian Liu, Yiran Xu, Xiangquan Fan, Mengxing Liao, Pingliang Li, Shichang Zou:
A macro SPICE model for 2-bits/cell split-gate flash memory cell. Microelectron. J. 63: 75-80 (2017) - [j15]Wenyi Zhu, Binghan Li, Tao Yu, Weiran Kong, Shichang Zou:
Investigation of read disturb in split-gate memory and its feasible solution. Microelectron. Reliab. 68: 51-56 (2017) - [j14]Lei Song, Zhiyuan Hu, Mengying Zhang, Xiaonian Liu, Lihua Dai, Zhengxuan Zhang, Shichang Zou:
Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technology. Microelectron. Reliab. 74: 1-8 (2017) - [j13]Lihua Dai, Xiaonian Liu, Mengying Zhang, Leqing Zhang, Zhiyuan Hu, Dawei Bi, Zhengxuan Zhang, Shichang Zou:
Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs. Microelectron. Reliab. 74: 74-80 (2017) - 2016
- [j12]Yunlong Zheng, Ruofan Dai, Zhuojun Chen, Shulong Sun, Zheng Wang, Zehua Sang, Min Lin, Shichang Zou:
Comparison of single-event transients of T-gate core and IO device in 130 nm partially depleted silicon-on-insulator technology. IEICE Electron. Express 13(12): 20160424 (2016) - [j11]Ruofan Dai, Yunlong Zheng, Jun He, Guojun Liu, Weiran Kong, Shichang Zou:
A 0.5-V novel complementary current-reused CMOS LNA for 2.4 GHz medical application. Microelectron. J. 55: 64-69 (2016) - 2014
- [j10]Shengbo Zhang, Jun Xiao, Guangjun Yang, Jian Hu, Shichang Zou:
A Novel Sourceline Voltage Compensation Circuit and a Wordline Voltage-Generating System for Embedded nor Flash Memory. IEEE Trans. Circuits Syst. II Express Briefs 61-II(9): 691-695 (2014) - [j9]Shengbo Zhang, Jun Xiao, Guangjun Yang, Jian Hu, Mingyong Huang, Shichang Zou:
A 1.35-V 16-Mb Twin-Bit-Cell Virtual-Ground-Architecture Embedded Flash Memory With a Sensing Current Protection Technique. IEEE Trans. Circuits Syst. I Regul. Pap. 61-I(10): 2862-2868 (2014) - 2013
- [j8]Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Ming Chen, Shichang Zou:
Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs. Microelectron. J. 44(2): 86-93 (2013) - [j7]Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Zhiyuan Hu, Ming Chen, Shichang Zou:
Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs. Microelectron. Reliab. 53(2): 259-264 (2013) - [c1]Zhen Sheng, Zhiqi Wang, Chao Qiu, Le Li, Albert Pang, Aimin Wu, Xi Wang, Shichang Zou, Fuwan Gan:
A compact and CMOS compatible MMI coupler with very low excess loss. OFC/NFOEC 2013: 1-3 - 2012
- [j6]Bingxu Ning, Zhengxuan Zhang, Zhangli Liu, Zhiyuan Hu, Ming Chen, Dawei Bi, Shichang Zou:
Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology. Microelectron. Reliab. 52(1): 130-136 (2012) - 2011
- [j5]Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou:
Impact of within-wafer process variability on radiation response. Microelectron. J. 42(6): 883-888 (2011) - [j4]Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Zhangli Liu, Ming Chen, Dawei Bi, Shichang Zou:
The impact of total ionizing radiation on body effect. Microelectron. J. 42(12): 1396-1399 (2011) - [j3]Zhangli Liu, Zhiyuan Hu, Zhengxuan Zhang, Hua Shao, Ming Chen, Dawei Bi, Bingxu Ning, Shichang Zou:
Comparison of TID response in core, input/output and high voltage transistors for flash memory. Microelectron. Reliab. 51(6): 1148-1151 (2011) - [j2]Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou:
Total ionizing dose effects in elementary devices for 180-nm flash technologies. Microelectron. Reliab. 51(8): 1295-1301 (2011) - [j1]Jianhua Zhou, Albert Pang, Steam Cao, Shichang Zou:
Hole tunneling from valence band and hot-carrier induced hysteresis effect in 0.13 μm partially depleted silicon-on-insulator n-MOSFETs. Microelectron. Reliab. 51(12): 2077-2080 (2011)
Coauthor Index
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