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Kazuo Tsutsui
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2010 – 2019
- 2019
- [c6]Toshiro Hiramoto, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shinichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Kazuo Itou, Toshihiro Takakura, Munetoshi Fukui, Shinichi Suzuki, Ken Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa:
Switching of 3300V Scaled IGBT by 5V Gate Drive. ASICON 2019: 1-3 - 2018
- [j22]Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima:
Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing. Microelectron. Reliab. 84: 226-229 (2018) - [j21]Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima:
Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors. Microelectron. Reliab. 84: 248-252 (2018) - [c5]Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Masahiro Watanabe, Naoyuki Shigvo, Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Shinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Lwai:
Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately. ESSDERC 2018: 26-29 - [c4]Kuniyuki Kakushima, Takuya Hoshii, M. Watanabe, N. Shizyo, K. Furukawa, Takuya Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, Ken Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Y. Numasawa, Atsushi Ogura
, Shinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai:
New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment. VLSI Circuits 2018: 105-106 - 2017
- [j20]Akito Sasaki, Hideyuki Oozu, Miho Nakamura, Katsuaki Aoki, Yoshinori Kataoka, Syuichi Saito, Kumpei Kobayashi, Wei Li, Kuniyuki Kakushima, Kazuo Tsutsui, Hiroshi Iwai:
Durability evaluation of hexagonal WO3 electrode for lithium ion secondary batteries. Microelectron. Reliab. 68: 86-90 (2017) - [c3]Kazuo Tsutsui, Kuniyuki Kakushima, Takuya Hoshii
3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat). ASICON 2017: 1137-1140 - 2016
- [j19]J. Chen, Takamasa Kawanago, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, D. Nohata, Hiroshi Nohira, Kuniyuki Kakushima:
La2O3 gate dielectrics for AlGaN/GaN HEMT. Microelectron. Reliab. 60: 16-19 (2016) - [j18]M. S. Hadi, Nobuyuki Sugii
Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes. Microelectron. Reliab. 63: 42-45 (2016) - [j17]J. Chen, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima:
Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current. Microelectron. Reliab. 63: 52-55 (2016) - 2015
- [j16]Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes. Microelectron. Reliab. 55(2): 402-406 (2015) - [j15]Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity. Microelectron. Reliab. 55(2): 407-410 (2015) - 2014
- [j14]Chunmeng Dou, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement. Microelectron. Reliab. 54(4): 725-729 (2014) - [j13]Yan Wu, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe
A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability. Microelectron. Reliab. 54(5): 899-904 (2014) - 2013
- [c2]Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT. ESSDERC 2013: 107-110 - 2012
- [j12]Chunmeng Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii
Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer. Microelectron. Reliab. 52(4): 688-691 (2012) - [j11]M. Mamatrishat, T. Kubota, T. Seki, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors. Microelectron. Reliab. 52(6): 1039-1042 (2012) - [c1]Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture. ESSDERC 2012: 89-92 - 2011
- [j10]D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii
Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise. Microelectron. Reliab. 51(4): 746-750 (2011) - 2010
- [j9]Yusuke Kobayashi, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao
Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness. Microelectron. Reliab. 50(3): 332-337 (2010) - [j8]Kuniyuki Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, Kiichi Tachi, Takamasa Kawanago, J. Song, Parhat Ahmet, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii
SrO capping effect for La2O3/Ce-silicate gate dielectrics. Microelectron. Reliab. 50(3): 356-359 (2010) - [j7]Kuniyuki Kakushima, Kiichi Tachi, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii
Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics. Microelectron. Reliab. 50(6): 790-793 (2010)
2000 – 2009
- 2008
- [j6]Parhat Ahmet, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii
Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack. Microelectron. Reliab. 48(11-12): 1769-1771 (2008) - 2007
- [j5]Joel Molina Reyes
Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress. IEICE Electron. Express 4(6): 185-191 (2007) - [j4]Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, Hiroshi Iwai:
Parasitic Effects in Multi-Gate MOSFETs. IEICE Trans. Electron. 90-C(10): 2051-2056 (2007) - 2006
- [j3]Jin-Aun Ng, Nobuyuki Sugii
Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing. IEICE Electron. Express 3(13): 316-321 (2006) - 2005
- [j2]Kazuya Takahashi, Yoshiki Kobayashi, Miyuki Fujii, Naoyuki Shimbo, Hirotada Ueda, Kazuo Tsutsui:
Combined Detection Method in a Sea Surveillance System. IEICE Trans. Inf. Syst. 88-D(2): 230-238 (2005) - [j1]Yongshik Kim, Kunihiro Miyauchi, Shun'ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai:
Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation. Microelectron. J. 36(1): 41-49 (2005)
Coauthor Index
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