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"Lowest IOFF < 3×10-21 A/μm in capacitorless DRAM ..."

Attilio Belmonte et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185398

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-29

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Attilio Belmonte, Shreya Kundu, S. Subhechha, Adrian Vaisman Chasin, Nouredine Rassoul, Harold Dekkers, H. Puliyalil, F. Seidel, P. Carolan, Romain Delhougne, Gouri Sankar Kar:
Lowest IOFF < 3×10^-21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT. VLSI Technology and Circuits 2023: 1-2

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