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Chinchun Meng
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2020 – today
- 2024
- [j13]Chinchun Meng, Sheng-Che Tseng, Tsung-Mao Chao, Kuan-Chang Tsung:
Analysis and Design of a High-Coupling-Factor Marchand-Balun Variant Suitable for Standard Silicon IC Process and Its Wide-Band Gilbert Mixer Application. IEEE Access 12: 160614-160624 (2024) - 2020
- [c7]Chinchun Meng, Wei-Ling Chang, Yu-Chih Hsiao, Meng-Che Li, Hsin-Yi Chien, Guo-Wei Huang:
Balanced Noise Design of Dual-Band 2.4/5-GHz pHEMT LNAs. RWS 2020: 255-258
2010 – 2019
- 2019
- [j12]Wei-Ling Chang, Chinchun Meng, Jung-Hung Ni, Kai-Chun Chang, Chih-Kai Chang, Po-Yi Lee, Yen-Lin Huang:
Analytical Noise Optimization of Single-/Dual-Band MOS LNAs With Substrate and Metal Loss Effects of Inductors. IEEE Trans. Circuits Syst. I Regul. Pap. 66-I(7): 2454-2467 (2019) - [c6]Yu-Chih Hsiao, Chinchun Meng, Chia-Ling Wang, Guo-Wei Huang:
pHEMT Single-Voltage-Supply Direct-Conversion Receiver With a 3-10 GHz LC Ladder LNA. RWS 2019: 1-3 - 2018
- [c5]Jin-Siang Syu, Chinchun Meng, Chun Yang, Guo-Wei Huang:
2-GHz 1.35-dB NF pHEMT single-voltage-supply process-independent low-noise amplifier. RWS 2018: 84-87 - 2015
- [c4]Wei-Ling Chang, Chinchun Meng, Kuan-Chang Tsung, Guo-Wei Huang:
30-GHz mHEMT divide-by-three injection-locked frequency divider with Marchand balun. RWS 2015: 68-70 - 2013
- [j11]Jin-Siang Syu, Chinchun Meng, Chia-Ling Wang:
A 2.4-GHz Low-Flicker-Noise CMOS Sub-Harmonic Receiver. IEEE Trans. Circuits Syst. I Regul. Pap. 60-I(2): 437-447 (2013) - [c3]Wei-Ling Chang, Chinchun Meng, Jin-Siang Syu, Chia-Ling Wang, Guo-Wei Huang:
2.4-GHz 7.4-mW 300-kHz flicker-noise-corner direct conversion receiver using 0.18 μm CMOS and deep-n-well NPN BJT. RWS 2013: 223-225 - 2012
- [c2]Jin-Siang Syu, Chinchun Meng, Po-Yi Wu:
High LO-to-RF isolation wideband gilbert upconversion micromixer using a phase-inverter rat-race coupler in 0.35µm SiGe HBT technology. RWS 2012: 447-450 - 2011
- [c1]Hung-Ju Wei, Chinchun Meng, Yi-Chen Lin:
Isolation performance of sub-harmonic Gilbert mixers. ISOCC 2011: 108-111
2000 – 2009
- 2009
- [j10]Tzung-Han Wu, Jin-Siang Syu, Chinchun Meng:
Analysis and Design of the 0.13- muhboxm CMOS Shunt-Series Series-Shunt Dual-Feedback Amplifier. IEEE Trans. Circuits Syst. I Regul. Pap. 56-I(11): 2373-2383 (2009) - 2007
- [j9]Tzung-Han Wu, Chinchun Meng:
10-GHz SiGe BiCMOS Sub-Harmonic Gilbert Mixer Using the Fully Symmetrical and Time-Delay Compensated LO Cells. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 90-A(2): 326-332 (2007) - [j8]Chinchun Meng, Jhin-Ci Jhong:
4-GHz Inter-Stage-Matched SiGe HBT LNA with Gain Enhancement and No Noise Figure Degradation. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 90-A(2): 398-400 (2007) - [j7]Tzung-Han Wu, Chinchun Meng, Tse-Hung Wu, Guo-Wei Huang:
A 5.2 GHz 47 dB Image Rejection Double Quadrature Gilbert Downconverter Using 0.35 µm SiGe HBT Technology. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 90-A(2): 401-405 (2007) - 2006
- [j6]Sheng-Che Tseng, Chinchun Meng, Yang-Han Li, Guo-Wei Huang:
The Port-to-Port Isolation of the Downconversion P-Type Micromixer Using Different N-Well Topologies. IEICE Trans. Electron. 89-C(4): 482-487 (2006) - [j5]Chinchun Meng, Jen-Yi Su, Bo-Chen Tsou, Guo-Wei Huang:
The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices. IEICE Trans. Electron. 89-C(4): 520-523 (2006) - [j4]Sheng-Che Tseng, Chinchun Meng, Wei-Yu Chen:
True 50% Duty-Cycle SSH and SHH SiGe BiCMOS Divide-by-3 Prescalers. IEICE Trans. Electron. 89-C(6): 725-731 (2006) - [j3]Tzung-Han Wu, Chinchun Meng:
5.2/5.7-GHz 48-dB Image Rejection GaInP/GaAs HBT Weaver Down-Converter Using LO Frequency Quadrupler. IEEE J. Solid State Circuits 41(11): 2468-2480 (2006) - 2005
- [j2]Chinchun Meng, Bo-Chen Tsou, Sheng-Che Tseng:
Determining GaInP/GaAs HBT Device Structure by DC Measurements on a Two-Emitter HBT Device and High Frequency Transit Time Measurements. IEICE Trans. Electron. 88-C(6): 1127-1132 (2005) - [j1]Tzung-Han Wu, Chinchun Meng, Tse-Hung Wu, Guo-Wei Huang:
A 5.7 GHz Gilbert Upconversion Mixer with an LC Current Combiner Output Using 0.35 µm SiGe HBT Technology. IEICE Trans. Electron. 88-C(6): 1267-1270 (2005)
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