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Srabanti Chowdhury
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2020 – today
- 2024
- [j1]Rafael Perez Martinez
, Masaya Iwamoto, Kelly Woo, Zhengliang Bian
Compact Model Parameter Extraction via Derivative-Free Optimization. IEEE Access 12: 123224-123235 (2024) - [c12]Rafael Perez Martinez, Masaya Iwamoto, Ana M. Banzer Morgado, Yiao Li, Roberto Tinti, Jianjun Xu, Chad Gillease, Steven Cochran, Bhawani Shankar, Else-Marie Schmidt, Zijian Song, Natalie Wagner, Philipp Pahl, Alexander Petr, Srabanti Chowdhury:
A Hybrid Physical ASM-HEMT Model Using a Neural Network-Based Methodology. BCICTS 2024: 38-41 - [i2]Rafael Perez Martinez, Masaya Iwamoto, Kelly Woo, Zhengliang Bian, Roberto Tinti, Stephen P. Boyd, Srabanti Chowdhury:
Compact Model Parameter Extraction via Derivative-Free Optimization. CoRR abs/2406.16355 (2024) - [i1]Rafael Perez Martinez, Stephen P. Boyd, Srabanti Chowdhury:
Robust Pareto Design of GaN HEMTs for Millimeter-Wave Applications. CoRR abs/2406.17337 (2024) - 2023
- [c11]Mohamadali Malakoutian, Srabanti Chowdhury:
On Extracting the Maximum Power Density at High Frequencies from Gallium Nitride and Related Materials. BCICTS 2023: 128-131 - [c10]Dennis Rich
Thermal Scaffolding for Ultra-Dense 3D Integrated Circuits. DAC 2023: 1-6 - 2022
- [c9]Bhawani Shankar, Ke Zeng, Brendan Gunning, Rafael Perez Martinez, Chuanzhe Meng, Jack Flicker, Andrew Binder, Jeramy Ray Dickerson, Robert Kaplar, Srabanti Chowdhury:
Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN P-N diode Under UIS stress. DRC 2022: 1-2 - [c8]Bhawani Shankar, Zhengliang Bian, Ke Zeng, Chuanzhe Meng, Rafael Perez Martinez, Srabanti Chowdhury
Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization. IRPS 2022: 2 - 2021
- [c7]Srabanti Chowdhury
Integration of Polycrystalline diamond on top of GaN and Ga2O3 devices for thermal management. DRC 2021: 1 - [c6]Ke Zeng, Srabanti Chowdhury
Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination. IRPS 2021: 1-4 - 2020
- [c5]Dong Ji, Burcu Ercan, Jia Zhuang, Lei Gu, Juan Rivas-Davila, Srabanti Chowdhury
Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) Diode. DRC 2020: 1-2 - [c4]Chenhao Ren, Mohamadali Malakoutian
Hydrogen-terminated diamond FET and GaN HEMT delivering CMOS inverter operation at high-temperature. DRC 2020: 1-2 - [c3]Dong Ji, Burcu Ercan, Garret Benson, A. K. M. Newaz, Srabanti Chowdhury
Robust avalanche in GaN leading to record performance in avalanche photodiode. IRPS 2020: 1-4
2010 – 2019
- 2019
- [c2]Jaeyi Chun, Srabanti Chowdhury
Current Scaling in Single and Multiple Fin Static Induction Transistors with Sub-Micron Fin Width. DRC 2019: 143-144 - [c1]Maria Ruzzarin
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). IRPS 2019: 1-5
Coauthor Index
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last updated on 2024-11-30 00:19 CET by the dblp team
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