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Dzuhri Radityo Utomo
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- affiliation: Universitas Gadjah Mada, Yogyakarta, Indonesia
- affiliation (former): KAIST, Yuseong-gu, Daejeon, South Korea
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2020 – today
- 2024
- [j8]Abdul Qahir
, Dzuhri Radityo Utomo
High-Power 150/245-GHz Fundamental Oscillators With 12.1/-2.54-dBm Peak Output Power for Phased Array Transceivers. IEEE J. Solid State Circuits 59(11): 3683-3693 (2024) - 2022
- [j7]Kyung-Sik Choi
A Fully Integrated 490-GHz CMOS Receiver Adopting Dual-Locking Receiver-Based FLL. IEEE J. Solid State Circuits 57(9): 2626-2639 (2022) - 2021
- [j6]Dae-Woong Park
A D-Band Power Amplifier in 65-nm CMOS by Adopting Simultaneous Output Power-and Gain-Matched Gmax-Core. IEEE Access 9: 99039-99049 (2021) - [j5]Dae-Woong Park
Design of High-Gain Sub-THz Regenerative Amplifiers Based on Double-Gmax Gain Boosting Technique. IEEE J. Solid State Circuits 56(11): 3388-3398 (2021) - [j4]Hafiz Usman Mahmood
A 27 dB Sidelobe Suppression, 1.12 GHz BW-10dB UWB Pulse Generator With Process Compensation. IEEE Trans. Circuits Syst. II Express Briefs 68(8): 2805-2809 (2021) - 2020
- [j3]Hyunki Jung
An 80 MHz Bandwidth and 26.8 dBm OOB IIP3 Transimpedance Amplifier With Improved Nested Feedforward Compensation and Multi-Order Filtering. IEEE Trans. Circuits Syst. 67-I(10): 3410-3421 (2020) - [c6]Kyung-Sik Choi, Dzuhri Radityo Utomo, Keun-Mok Kim, Byeonghun Yun, Sang-Gug Lee, In-Young Lee:
29.7 A 490GHz 32mW Fully Integrated CMOS Receiver Adopting Dual-Locking FLL. ISSCC 2020: 452-454 - [c5]Dae-Woong Park, Dzuhri Radityo Utomo, Jong-Phil Hong, Kristof Vaesen, Piet Wambacq, Sang-Gug Lee:
A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-Gmax Gain Boosting Technique. VLSI Circuits 2020: 1-2 - [c4]Dzuhri Radityo Utomo, Dae-Woong Park, Byeonghun Yun, Sang-Gug Lee:
A 293/440 GHz Push-Push Double Feedback Oscillators with 5.0/-3.9 dBm Output Power and 2.9/0.6 % DC-to-RF Efficiency in 65 nm CMOS. VLSI Circuits 2020: 1-2
2010 – 2019
- 2019
- [j2]Dae-Woong Park
A 230-260-GHz Wideband and High-Gain Amplifier in 65-nm CMOS Based on Dual-Peak $G_{{\mathrm{max}}}$ -Core. IEEE J. Solid State Circuits 54(6): 1613-1623 (2019) - 2018
- [c3]Dae-Woong Park, Dzuhri Radityo Utomo, Jong-Phil Hong, Sang-Gug Lee:
A 230-260GHz wideband amplifier in 65nm CMOS based on dual-peak Gmax-core. ASP-DAC 2018: 301-302 - [c2]Hyunki Jung, Dzuhri Radityo Utomo, Saebyeok Shin, Seok-Kyun Han, Sang-Gug Lee, Jusung Kim:
Ka-band RF Front-End with 5dB NF and 16dB conversion gain in 45nm CMOS technology. ISOCC 2018: 105-106 - [c1]Saebyeok Shin, Dzuhri Radityo Utomo, Hyunki Jung, Seok-Kyun Han, Sang-Gug Lee, Jusung Kim:
A 22.8-to-32.4 GHz Injection-locked Frequency Tripler with Source Degeneration. ISOCC 2018: 107-108 - 2017
- [j1]Jusung Kim
The Evolution of Channelization Receiver Architecture: Principles and Design Challenges. IEEE Access 5: 25385-25395 (2017)
Coauthor Index
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