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Joris Lacord
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2020 – today
- 2022
- [c7]T. Dubreuil, P. Amari, Sylvain Barraud, Joris Lacord, Eduardo Esmanhotto, Valentina Meli, S. Martin, Niccolo Castellani, Bernard Previtali, François Andrieu:
A novel 3D 1T1R RRAM architecture for memory-centric Hyperdimensional Computing. IMW 2022: 1-4 - [c6]Tadeu Mota Frutuoso, Xavier Garros, Perrine Batude, Laurent Brunet, Joris Lacord, Benoit Sklénard, V. Lapras, Claire Fenouillet-Béranger, M. Ribotta, A. Magalhaes-Lucas, J. Kanyandekwe, R. Kies, G. Romano, Edoardo Catapano, Mikaël Cassé, Jose Lugo-Alvarez, Philippe Ferrari, Fred Gaillard:
Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration. VLSI Technology and Circuits 2022: 332-333 - 2021
- [c5]Tadeu Mota Frutuoso
, Jose Lugo-Alvarez
Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration. IRPS 2021: 1-5 - 2020
- [i1]Mona Ezzadeen, D. Bosch, Bastien Giraud, Sylvain Barraud, Jean-Philippe Noël, Didier Lattard, Joris Lacord, Jean-Michel Portal, François Andrieu:
Ultra-High-density 3D vertical RRAM with stacked JunctionLess nanowires for In-Memory-Computing applications. CoRR abs/2012.00061 (2020)
2010 – 2019
- 2016
- [c4]Gerald Cibrario, Nour Ben Salem, Joris Lacord, Karim Azizi-Mourier, Olivier Rozeau, Etienne Maurin, Olivier Billoint, Sébastien Thuries, Alexandre Valentian:
From 2D to monolithic 3D predictive design platform: An innovative migration methodology for benchmark purpose. 3DIC 2016: 1-5 - [c3]Melanie Brocard, Guillaume Berhault, Sébastien Thuries, Fabien Clermidy, Perrine Batude, Claire Fenouillet-Béranger, Laurent Brunet, François Andrieu, Fabien Deprat, Joris Lacord, Olivier Rozeau, Gerald Cibrario, Olivier Billoint:
Impact of intermediate BEOL technology on standard cell performances of 3D VLSI. ESSDERC 2016: 218-221 - 2014
- [c2]Frederic Monsieur, Yvan Denis, Denis Rideau, Vincent Quenette, Gilles Gouget, Clément Tavernier, Hervé Jaouen
The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies. ESSDERC 2014: 254-257 - 2012
- [c1]Joris Lacord, Perrine Batude, Gérard Ghibaudo, Frédéric Boeuf:
Analytical modeling of parasitics in monolithically integrated 3D inverters. ICICDT 2012: 1-4
Coauthor Index
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