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Koji Shibutani
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2020 – today
- 2021
- [j2]Mitsuhiko Igarashi, Yuuki Uchida, Yoshio Takazawa, Makoto Yabuuchi, Yasumasa Tsukamoto, Koji Shibutani, Kazutoshi Kobayashi:
An Analysis of Local BTI Variation with Ring-Oscillator in Advanced Processes and Its Impact on Logic Circuit and SRAM. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 104-A(11): 1536-1545 (2021)
2010 – 2019
- 2019
- [c9]Mitsuhiko Igarashi, Yuuki Uchida, Yoshio Takazawa, Makoto Yabuuchi, Yasumasa Tsukamoto, Koji Shibutani:
Study of Local BTI Variation and its Impact on Logic Circuit and SRAM in 7 nm Fin-FET Process. IRPS 2019: 1-6 - [c8]Kan Takeuchi, Masaki Shimada, Shinya Konishi, Daisuke Oshida, Naoya Ota, Takashi Yasumasu, Koji Shibutani, Tomohiro Iwashita, Tetsuya Kokubun, Fumio Tsuchiya:
Experimental Implementation of 8.9Kgate Stress Monitor in 28nm MCU Along with Safety Software Library for IoT Device Maintenance. IRPS 2019: 1-7 - 2018
- [j1]Kan Takeuchi, Masaki Shimada, Takeshi Okagaki, Koji Shibutani, Koji Nii, Fumio Tsuchiya:
Wear-out stress monitor utilising temperature and voltage sensitive ring oscillators. IET Circuits Devices Syst. 12(2): 182-188 (2018) - [c7]Mitsuhiko Igarashi, Yuuki Uchida, Yoshio Takazawa, Yasumasa Tsukamoto, Koji Shibutani, Koji Nii:
A Fully Standard-Cell Based On-Chip BTI and HCI Monitor with 6.2x BTI sensitivity and 3.6x HCI sensitivity at 7 nm Fin-FET Process. A-SSCC 2018: 195-196 - [c6]Mitsuhiko Igarashi, Yuuki Uchida, Yoshio Takazawa, Yasumasa Tsukamoto, Koji Shibutani, Koji Nii:
Study of impact of BTI's local layout effect including recovery effect on various standard-cells in 10nm FinFET. IRPS 2018: 1 - 2017
- [c5]Mitsuhiko Igarashi, Yoshio Takazawa, Yasumasa Tsukamoto, Kan Takeuchi, Koji Shibutani:
NBTI/PBTI separated BTI monitor with 4.2x sensitivity by standard cell based unbalanced ring oscillator. A-SSCC 2017: 201-204 - 2016
- [c4]Kan Takeuchi, Masaki Shimada, Takeshi Okagaki, Koji Shibutani, Koji Nii, Fumio Tsuchiya:
FEOL/BEOL wear-out estimator using stress-to-frequency conversion of voltage/temperature-sensitive ring oscillators for 28nm automotive MCUs. ESSCIRC 2016: 265-268 - 2015
- [c3]Mitsuhiko Igarashi, Kan Takeuchi, Takeshi Okagaki, Koji Shibutani, Hiroaki Matsushita, Koji Nii:
An on-die digital aging monitor against HCI and xBTI in 16 nm Fin-FET bulk CMOS technology. ESSCIRC 2015: 112-115 - 2014
- [c2]Mitsuhiko Igarashi, Hideki Aono, Hideaki Abe, Koji Shibutani, Kan Takeuchi:
Assessment of reliability impact on GHz processors with moderate overdrive. ISQED 2014: 456-460 - 2012
- [c1]Kazuki Fukuoka, Ryo Mori, A. Kato, Motoshige Igarashi, Koji Shibutani, T. Yamaki, Shinji Tanaka, Koji Nii, Sadayuki Morita, Takao Koike, Noriaki Sakamoto:
A 123μW standby power technique with EM-tolerant 1.8V I/O NMOS power switch in 28nm HKMG technology. CICC 2012: 1-4
Coauthor Index
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