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Xiaowu Cai
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2020 – today
- 2024
- [j10]Yafei Xie, Xiaowu Cai, Yu Lu, Longli Pan, Jian Lu, Lei Wang, Bo Li:
A dual-mode buck converter with dynamic sawtooth voltage for wide input voltage range application. IEICE Electron. Express 21(12): 20240148 (2024) - [j9]Yafei Xie, Xiaowu Cai, Yu Lu, Jianying Dang, Longli Pan, Mali Gao, Lei Wang, Bo Li:
An integrated capacitor-less LDO with transient and stability enhancement. IEICE Electron. Express 21: 20240199 (2024) - [j8]Tian Han, Fazhan Zhao, Ximing Fu, Xiaowu Cai, Weiwei Yan, Haitao Zhao, Wenxin Zhao, Bo Li:
A precision current sensing circuit with chopper amplifier of symmetric topology. Microelectron. J. 146: 106103 (2024) - [j7]Jianying Dang, Xiaowu Cai, Longli Pan, Liang Shan, Yu Lu, Yafei Xie, Xupeng Wang, Shiping Wang, Bo Li:
A Novel Reliability-Enhanced Dual Over-Temperature Protection Circuit With Delayed Thermal Restart for Power ICs. IEEE Trans. Circuits Syst. II Express Briefs 71(3): 1471-1475 (2024) - [j6]Yu Lu, Xiaowu Cai, Jian Lu, Longli Pan, Jianying Dang, Yafei Xie, Xupeng Wang, Bo Li:
A nMOS-R Cross-Coupled Level Shifter With High dV/dt Noise Immunity for 600-V High-Voltage Gate Driver IC. IEEE Trans. Very Large Scale Integr. Syst. 32(11): 1993-2000 (2024) - 2023
- [j5]Mali Gao, Xiaowu Cai, Weiwei Yan, Haitao Zhao, Ruirui Xia, Yuexin Gao:
A wide input range, external capacitor-less LDO with fast transient response. IEICE Electron. Express 20(7): 20230008 (2023) - [j4]Liqiang Ding, Xiaowu Cai, Mali Gao, Ruirui Xia, Yuexin Gao:
A high reliability under-voltage lock out circuit for power driver IC. Integr. 88: 166-172 (2023) - [j3]Ruirui Xia, Xiaowu Cai, Liqiang Ding, Mali Gao, Yuexin Gao, Tian Han, Jianying Dang, Bo Li:
An on-chip integrated current sensor with high precision and large current range for smart power ICs. Microelectron. J. 134: 105686 (2023) - [j2]Tian Han, Fazhan Zhao, Xiaowu Cai, Liang Shan, Yun Tang, Bo Li:
Novel SenseFET structure for VDMOS with adopting body reverse bias technique to adjust the reference current ratio. Microelectron. J. 134: 105687 (2023)
2010 – 2019
- 2013
- [j1]Xiaowu Cai, Junxiu Wei, Chao Liang, Zhe Gao, Chuan Lv:
Investigation of high voltage SCR-LDMOS ESD device for 150 V SOI BCD process. Microelectron. Reliab. 53(6): 861-866 (2013)
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