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Ran Liu 0001
Person information
- affiliation: Fudan University, State Key Laboratory of ASIC and System, Department of Microelectronics, Shanghai, China
Other persons with the same name
- Ran Liu — disambiguation page
- Ran Liu 0002 — Beijing Normal University, State Key Laboratoy of Remote Sensing Science, China
- Ran Liu 0003 — Fudan University, Software School, Shanghai, China (and 1 more)
- Ran Liu 0004 — Huazhong University of Science & Technology
- Ran Liu 0005
— Shanghai Jiao Tong University, Department of Industrial Engineering and Logistics Management, China (and 2 more)
- Ran Liu 0006
- Ran Liu 0007
- Ran Liu 0008
- Ran Liu 0009
- Ran Liu 0010 — Northeastern University, Department of Electrical and Computer Engineering, Boston, MA, USA
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2020 – today
- 2021
- [j10]Jinjing An, Zhuo Zou
An IoT-Based Life Cycle Assessment Platform of Wind Turbines. Sensors 21(4): 1233 (2021)
2010 – 2019
- 2019
- [c10]Jiarui Bao, Shuyan Hu, Guangxi Hu, Laigui Hu
A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance. ASICON 2019: 1-4 - 2017
- [j9]Han Jin, Yajie Qin
A Mobile-Based High Sensitivity On-Field Organophosphorus Compounds Detecting System for IoT-Based Food Safety Tracking. J. Sensors 2017: 8797435:1-8797435:13 (2017) - [c9]Haisheng Qian, Guangxi Hu, Laigui Hu
Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices. ASICON 2017: 249-251 - [c8]Qiyuan Wang, Youwei Zhang
Layer thinning of MoS2 flakes by thermal annealing in air. ASICON 2017: 580-583 - 2016
- [j8]Guangxi Hu, Shuyan Hu, Jianhua Feng, Ran Liu, Lingli Wang, Li-Rong Zheng:
Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs. Microelectron. J. 50: 60-65 (2016) - 2015
- [c7]Guangxi Hu, Shuyan Hu, Jianhua Feng, Ran Liu, Lingli Wang, Li-Rong Zheng:
Analytical models for threshold voltage, drain induced barrier lowering effect of junctionless triple-gate FinFETs. ASICON 2015: 1-4 - 2013
- [j7]Botao Shao, Qiang Chen, Yasar Amin
Chipless RFID tags fabricated by fully printing of metallic inks. Ann. des Télécommunications 68(7-8): 401-413 (2013) - [c6]Ping Xiang, Zhihao Ding, Guangxi Hu, Hui Chol Ri, Ran Liu, Lingli Wang, Xing Zhou:
Analytic models for electric potential and subthreshold swing of the dual-material double-gate MOSFET. ASICON 2013: 1-4 - [c5]Lei Wan, Yajie Qin, Patrick Chiang, Guoping Chen, Ran Liu, Zhiliang Hong:
High-sensitivity photodetection sensor front-end, detecting organophosphourous compounds for food safety. CICC 2013: 1-4 - 2012
- [j6]Guanghui Mei, Peicheng Li, Guangxi Hu, Ran Liu, Lingli Wang, Tingao Tang:
Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs. Microelectron. J. 43(11): 894-897 (2012) - [j5]Linkai Wang, Xiaofang Zhou, Gerald E. Sobelman, Ran Liu:
Generic Mixed-Radix FFT Pruning. IEEE Signal Process. Lett. 19(3): 167-170 (2012) - 2011
- [j4]Ke Zhang, Wenhong Li, Ran Liu:
A low-dropout voltage regulator with active current amplifier frequency compensation. Int. J. Circuit Theory Appl. 39(4): 373-383 (2011) - [j3]Zhihao Ding, Guangxi Hu, Jinglun Gu, Ran Liu, Lingli Wang, Tingao Tang:
An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs. Microelectron. J. 42(3): 515-519 (2011) - [j2]Peicheng Li, Guangxi Hu, Ran Liu, Tingao Tang:
Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETs. Microelectron. J. 42(10): 1164-1168 (2011) - [c4]Guanghui Mei, Peicheng Li, Guangxi Hu, Ran Liu, Tingao Tang:
Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs. ASICON 2011: 555-557 - [c3]Peicheng Li, Guanghui Mei, Guangxi Hu, Ran Liu, Tingao Tang:
Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study. ASICON 2011: 735-738
2000 – 2009
- 2009
- [j1]Ke Zhang, Shiwei Cheng, Xiaofang Zhou, Wenhong Li, Ran Liu:
A wide band differentially switch-tuned CMOS monolithic quadrature VCO with a low Kvco and high linearity. Microelectron. J. 40(6): 881-886 (2009) - [c2]Pingan Zhao, Yinqing Li
EWOD using P(VDF-TrFE). NEMS 2009: 202-205 - [c1]Jing Wan, Shao-Ren Deng, Yifang Chen, Ejaz Huq, Ran Liu, Xin-Ping Qu:
Trilayer nanoimprint fabrication and simulation of the silicon nanowire sensor for gas detection. NEMS 2009: 1013-1016
Coauthor Index
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