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Wen Liu 0010
Person information
- affiliation: Xi'an Jiaotong-Liverpool University, Department of Electrical and Electronic Engineering, Suzhou, China
Other persons with the same name
- Wen Liu — disambiguation page
- Wen Liu 0001
— Chiba University, Department of Urban Environment Systems, Japan
- Wen Liu 0002
- Wen Liu 0003
- Wen Liu 0004
- Wen Liu 0005
- Wen Liu 0006
- Wen Liu 0007
- Wen Liu 0008
- Wen Liu 0009
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2020 – today
- 2023
- [c14]Junzhe Tan, Dongyi Yang, Shiqiang Wu
Simulation and Analysis of Two GaN MIS-HEMT-Based Step-down Level Shifters. ICICDT 2023: 52-56 - [c13]Xuan Chi, Yubo Wang, Fan Li, Yixiao Huang, Chenruiyuan Yu, Shiqiang Wu
The Investigation of Source Field Plate on the Performance of pGaN Gate Device and Dual-Gate Bidirectional Switch using TCAD Simulation. ICICDT 2023: 148-151 - [c12]Shiqiang Wu
The Comparison of Dynamic Performance Between Hydrogen Treated and Etched p-GaN HEMTs. ICICDT 2023: 152-155 - [c11]Roupu Zhu, Chengwei Liu, Yuhao Zhu, Wen Liu, Yi Pei, Man Hoi Wong:
Physics-Based Small-Signal Model of Ga2O3 Hot-Electron Transistor. ICICDT 2023: 156-158 - 2022
- [c10]Jiachen Duan, Yuanlei Zhang, Ye Liang
Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3 charge trapping layer. ICICDT 2022: 89-92 - 2021
- [c9]Ang Li, Yi Shen, Ziqian Li
Stability Analysis of Monolithic GaN MIS-HEMT Comparator with Device PBTI and Circuit Stress Tests. ASICON 2021: 1-3 - [c8]Ye Liang
Threshold Voltage Instability in D-mode AlGaN/GaN MIS-HEMTs with Al2O3 Gate Dielectric. ICICDT 2021: 1-4 - [c7]Yuhao Zhu
Monolithic DFF-NAND and DFF-NOR logic circuits based on GaN MIS-HEMT. ICICDT 2021: 1-4 - 2020
- [j2]Yutao Cai
Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices. IEEE Access 8: 95642-95649 (2020)
2010 – 2019
- 2019
- [j1]Miao Cui
Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters. IEEE Access 7: 184375-184384 (2019) - [c6]Qinglei Bu
Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode With and Without Recessed Anode. ICICDT 2019: 1-4 - [c5]Yutao Cai, Yang Wang, Miao Cui, Wen Liu, Huiqing Wen, Cezhou Zhao, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker:
Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. ICICDT 2019: 1-5 - [c4]Xudong Chen, Huiqing Wen, Qinglei Bu
Design of GaN-based Voltage Reference Circuit for a Wide-Temperature-Range Operation. ICICDT 2019: 1-4 - [c3]Miao Cui, Yutao Cai, Qinglei Bu
The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters. ICICDT 2019: 1-4 - [c2]Lei Kang, Huiqing Wen, Qinglei Bu
Design and Evaluation of GaN-based Over-Temperature Protection Circuit. ICICDT 2019: 1-4 - [c1]Bangbo Sun, Huiqing Wen, Qingling Bu, Wen Liu:
Design and Evaluation of AlGaN/GaN High Electron Mobility Transistor Comparator. ICICDT 2019: 1-4
Coauthor Index
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