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"State-Transition-Aware Spilling Heuristic for MLC STT-RAM-Based Registers."

Yuanhui Ni et al. (2017)

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DOI: 10.1155/2017/1030249

access: open

type: Journal Article

metadata version: 2018-08-16

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  dblp key:
  - journals/vlsi/NiGCYQ17
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  - https://dblp.org/rec/journals/vlsi/NiGCYQ17
Yuanhui Ni, Zhiyao Gong, Weiwen Chen, Chengmo Yang, Keni Qiu:
State-Transition-Aware Spilling Heuristic for MLC STT-RAM-Based Registers. VLSI Design 2017: 1030249:1-1030249:9 (2017)

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