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"Nanocrack formation in AlGaN/GaN high electron mobility transistors ..."

Patrick G. Whiting et al. (2017)

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DOI: 10.1016/J.MICROREL.2017.02.005

access: closed

type: Journal Article

metadata version: 2024-10-06

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Patrick G. Whiting, Nicholas G. Rudawski, M. R. Holzworth, Stephen J. Pearton, Kevin S. Jones, Lu Liu, T. S. Kang, Fan Ren:
Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts. Microelectron. Reliab. 70: 41-48 (2017)

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