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"Failure analysis of 650 V enhancement mode GaN HEMT after short ..."

Carmine Abbate et al. (2018)

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DOI: 10.1016/J.MICROREL.2018.07.071

access: closed

type: Journal Article

metadata version: 2025-01-19

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Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi:
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests. Microelectron. Reliab. 88-90: 677-683 (2018)

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