2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal-insulator-semiconductor high-electron -mobility transistors.">2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal-insulator-semiconductor high-electron -mobility transistors., dblp, computer science, bibliography, knowledge graph, author, editor, publication, conference, journal, book, thesis, database, collection, open data, bibtex">

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"Influence of the ZrO2 gate dielectric layer on polarization ..."

Guangyuan Jiang et al. (2022)

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DOI: 10.1016/J.MEJO.2022.105602

access: closed

type: Journal Article

metadata version: 2024-03-22

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Guangyuan Jiang, Peng Cui, Guangyuan Zhang, Yuping Zeng, Guang Yang, Chen Fu, Zhaojun Lin, Mingyan Wang, Heng Zhou:
Influence of the ZrO₂ gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal-insulator-semiconductor high-electron -mobility transistors. Microelectron. J. 129: 105602 (2022)

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