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"Study on the influence mechanism of gate oxide degradation on DM EMI ..."

Chao Dong et al. (2024)

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DOI: 10.1016/J.MEJO.2024.106460

access: closed

type: Journal Article

metadata version: 2024-11-30

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Chao Dong, Sai Gao, Yulin Liu, Gengji Wang, Jinliang Yin, Mingxing Du:
Study on the influence mechanism of gate oxide degradation on DM EMI signals in SiC MOSFET. Microelectron. J. 154: 106460 (2024)

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