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"A Low-Voltage 1 Mb FRAM in 0.13 µm CMOS Featuring Time-to-Digital ..."

Masood Qazi et al. (2012)

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DOI: 10.1109/JSSC.2011.2164732

access: closed

type: Journal Article

metadata version: 2020-08-30

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Masood Qazi, Michael Clinton, Steven Bartling, Anantha P. Chandrakasan:
A Low-Voltage 1 Mb FRAM in 0.13 µm CMOS Featuring Time-to-Digital Sensing for Expanded Operating Margin. IEEE J. Solid State Circuits 47(1): 141-150 (2012)

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