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"Vertical GaN Fin JFET: A Power Device with Short Circuit Robustness at ..."

R. Zhang et al. (2022)

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DOI: 10.1109/IRPS48227.2022.9764569

access: closed

type: Conference or Workshop Paper

metadata version: 2022-05-09

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  dblp key:
  - conf/irps/ZhangLLPEDZ22
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R. Zhang, J. Liu, Q. Li, S. Pidaparthi, A. Edwards, C. Drowley, Y. Zhang:
Vertical GaN Fin JFET: A Power Device with Short Circuit Robustness at Avalanche Breakdown Voltage. IRPS 2022: 1-8

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