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Konstantin O. Petrosyants

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2020 – today

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2021
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Konstantin O. Petrosyants, Lev M. Sambursky, Maxim V. Kozhukhov, Mamed R. Ismail-Zade, Igor A. Kharitonov, Bo Li:
SPICE Compact BJT, MOSFET, and JFET Models for ICs Simulation in the Wide Temperature Range (From -200 °C to +300 °C). IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 40(4): 708-722 (2021)

2010 – 2019

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2019
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Konstantin O. Petrosyants, Maxim V. Kozhukhov, Dmitry Popov:
Radiation- and Temperature-Induced Fault Modeling and Simulation in BiCMOS LSI's Components using RAD-THERM TCAD Subsystem. DDECS 2019: 1-4
2018
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Konstantin O. Petrosyants, Igor A. Kharitonov:
SPICE Simulation of Total Dose and Aging Effects in MOSFET Circuits. EWDTS 2018: 1-6
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Konstantin O. Petrosyants, N. I. Ryabov, E. I. Batarueva:
Compact SPICE Models of the Standard Layout Fragments in LSI Interconnections. EWDTS 2018: 1-5
2017
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Konstantin O. Petrosyants, Lev M. Sambursky, Igor A. Kharitonov, Boris G. Lvov:
Radiation-Induced Fault Simulation of SOI/SOS CMOS LSI's Using Universal Rad-SPICE MOSFET Model. J. Electron. Test. 33(1): 37-51 (2017)
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Konstantin O. Petrosyants, Igor A. Kharitonov, Sergey V. Lebedev, Lev M. Sambursky, Sergey O. Safonov, Veniamin G. Stakhin:
Electrical characterization and reliability of submicron SOI CMOS technology in the extended temperature range (to 300 °C). Microelectron. Reliab. 79: 416-425 (2017)
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Konstantin O. Petrosyants, Lev M. Sambursky, Igor A. Kharitonov, Mamed R. Ismail-Zade:
Generalized test automation method for MOSFET's including characteristics measurements and model parameters extraction for aero-space applications. EWDTS 2017: 1-8
2016
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Konstantin O. Petrosyants, Lev M. Sambursky, Igor A. Kharitonov, Boris G. Lvov:
Fault simulation in radiation-hardened SOI CMOS VLSIs using universal compact MOSFET model. LATS 2016: 117-122
2014
[c11]
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Konstantin O. Petrosyants, Maxim V. Kozhukhov:
SPICE model parameters extraction taking into account the ionizing radiation effects. EWDTS 2014: 1-4
[c10]
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Konstantin O. Petrosyants, Artur Kortunov, Igor A. Kharitonov, Anton Popov, Natalya Gomanilova, Nikita I. Rjabov:
Analysis and Simulation of temperature-current rise in modern PCB traces. EWDTS 2014: 1-4
[c9]
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A. N. Tikhonov, Boris G. Lvov, Konstantin O. Petrosyants, Saygid U. Uvaysov, Igor A. Kharitonov, S. V. Balakin, A. N. Chetyrkin, V. N. Krutikov:
The system of microelectronics education for aerospace industry based on "university-enterprise" link. EWME 2014: 137-141
2013
[c8]
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Konstantin O. Petrosyants, Igor A. Kharitonov:
Account for Radiation Effects in Signal Integrity Analysis of PCB Digital Systems. DSD 2013: 479-482
[c7]
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Konstantin O. Petrosyants, P. A. Kozynko, Igor A. Kharitonov, A. V. Sidorov, Y. N. Chichkanov:
New version of automated electro-thermal analysis in Mentor Graphics PCB Design System. EWDTS 2013: 1-4
[c6]
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Konstantin O. Petrosyants, Igor A. Kharitonov, D. A. Popov:
Coupled TCAD-SPICE simulation of parasitic BJT effect on SOI CMOS SRAM SEU. EWDTS 2013: 1-4
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Konstantin O. Petrosyants, Igor A. Kharitonov, Lev M. Sambursky, V. N. Bogatyrev, Z. M. Povarnitcyna, E. S. Drozdenko:
Simulation of total dose influence on analog-digital SOI/SOS CMOS circuits with EKV-RAD macromodel. EWDTS 2013: 1-6
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Konstantin O. Petrosyants, Nikita I. Rjabov:
Logi-thermal analysis of digital circuits using mixed-signal simulator Questa ADMS. EWDTS 2013: 1-4
2011
[c3]
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Konstantin O. Petrosyants, E. V. Orekhov, D. A. Popov, Igor A. Kharitonov, Lev M. Sambursky, A. P. Yatmanov, A. V. Voevodin, A. N. Mansurov:
TCAD-SPICE simulation of MOSFET switch delay time for different CMOS technologies. EWDTS 2011: 188-190
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Konstantin O. Petrosyants, Eric Vologdin, Dmitry Smirnov, Rostislav Torgovnikov, Maxim V. Kozhukhov:
Si BJT and SiGe HBT performance modeling after neutron radiation exposure. EWDTS 2011: 267-270
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Konstantin O. Petrosyants, Nikita I. Rjabov:
Thermal analysis of the ball grid array packages. EWDTS 2011: 275-278

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