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Ajay Kumar 0004

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affiliation: Delhi Technological University, India

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2020 – today

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2024
[j4]
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  - journals/wpc/RajawatCK24
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Vandana Singh Rajawat, Bharat Choudhary, Ajay Kumar:
Performance Assessment of High-k SOI GaN FinFET with Different Fin Aspect Ratio for RF/Wireless Applications. Wirel. Pers. Commun. 136(2): 867-882 (2024)
2023
[j3]
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Madan Mohan Tripathi, Ajay Kumar:
Small-Signal Modeling of GaN-BTG MOSFET for Wireless Applications. Wirel. Pers. Commun. 132(3): 2243-2253 (2023)
2020
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  - journals/iet-cds/TripathiSCK20
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Pranav M. Tripathi, Harshit Soni, Rishu Chaujar, Ajay Kumar:
Numerical simulation and parametric assessment of GaN buffered trench gate MOSFET for low power applications. IET Circuits Devices Syst. 14(6): 915-922 (2020)

2010 – 2019

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2019
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  - conf/mocast/00040TC19
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Ajay Kumar, Neha Gupta, Madan Mohan Tripathi, Rishu Chaujar:
Non-Quasi-Static Small-Signal Modeling of TGRC MOSFET in Parameter Perspective for RF/Microwave Applications. MOCAST 2019: 1-4
[c3]
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Ajay Kumar, Neha Gupta, Samarth Singh, Balark Tiwari, Madan Mohan Tripathi, Rishu Chaujar:
Carbon Nanotube Recessed Channel (CNT-RC) MOSFET for High Linearity/ULSI Applications. TENCON 2019: 2564-2567
2018
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Ajay Kumar, Samarth Singh, Balark Tiwari, Rishu Chaujar:
Temperature Reliability of Junctionless Twin Gate Recessed Channel (JL-TGRC) MOSFET with Different Gate Material for Low Power Digital-Logic Applications. TENCON 2018: 1070-1074
2016
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Ajay Kumar, Neha Gupta, Rishu Chaujar:
TCAD RF performance investigation of Transparent Gate Recessed Channel MOSFET. Microelectron. J. 49: 36-42 (2016)
2014
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  - conf/ised/00030C14
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Neha Gupta, Ajay Kumar, Rishu Chaujar:
Impact of Channel Doping and Gate Length on Small Signal Behaviour of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET at THz Frequency. ISED 2014: 192-196

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