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Gennadi Bersuker
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2020 – today
- 2023
- [c13]Gennadi Bersuker, E. Tang, Dmitry Veksler:
Signal duration sensitive degradation in scaled devices. IRPS 2023: 1-5 - 2022
- [c12]S. S. Teja Nibhanupudi, Dmitry Veksler, Anupam Roy
, Matthew Coupin, Kevin C. Matthews, Jamie Warner, Gennadi Bersuker, Jaydeep P. Kulkarni, Sanjay Kumar Banerjee:
Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices. DRC 2022: 1-2 - [c11]James Farmer
Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics. IRPS 2022: 36-1 - 2021
- [c10]James Farmer
Mitigating switching variability in carbon nanotube memristors. IRPS 2021: 1-4 - 2020
- [c9]Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, Maribeth Mason, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell, Thomas Rueckes, Lee Cleveland, Harry Luan, David C. Gilmer:
Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions. IRPS 2020: 1-4
2010 – 2019
- 2019
- [c8]Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell:
Switching Variability Factors in Compliance-Free Metal Oxide RRAM. IRPS 2019: 1-5 - 2015
- [j10]Mohamed T. Ghoneim
Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon. IEEE Trans. Reliab. 64(2): 579-585 (2015) - [c7]G. Sereni, Luca Vandelli, Roberto Cavicchioli
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs. IRPS 2015: 2 - [c6]Violaine Iglesias
Threading dislocations in III-V semiconductors: Analysis of electrical conduction. IRPS 2015: 4 - 2014
- [c5]Gennadi Bersuker:
Assessing device reliability through atomic-level modeling of material characteristics. ICICDT 2014: 1-3 - 2013
- [c4]Gennadi Bersuker, Brian Butcher, David Gilmer, Paul Kirsch, Luca Larcher
Connecting RRAM performance to the properties of the hafnia-based dielectrics. ESSDERC 2013: 163-165 - [c3]Gennadi Bersuker:
Microscopic degradation models for advanced technology. VLSI-DAT 2013: 1 - 2012
- [j9]Violaine Iglesias
Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures. Microelectron. Reliab. 52(9-10): 2110-2114 (2012) - [c2]Francesco Maria Puglisi
Random Telegraph Signal noise properties of HfOx RRAM in high resistive state. ESSDERC 2012: 274-277 - [c1]Chang Yong Kang, K. W. Ang, R. Hill, W. Y. Loh, Jungwoo Oh
Emerging CMOS and beyond CMOS technologies for an ultra-low power 3D world. ICICDT 2012: 1-4
2000 – 2009
- 2009
- [j8]N. A. Chowdhury, X. Wang, Gennadi Bersuker, Chadwin D. Young
Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion. Microelectron. Reliab. 49(5): 495-498 (2009) - 2008
- [j7]R. Pagano, Salvatore Lombardo
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks. Microelectron. Reliab. 48(11-12): 1759-1764 (2008) - 2007
- [j6]Chadwin D. Young
Electrical characterization and analysis techniques for the high-kappa era. Microelectron. Reliab. 47(4-5): 479-488 (2007) - [j5]Arnost Neugroschel, Gennadi Bersuker, Rino Choi
Applications of DCIV method to NBTI characterization. Microelectron. Reliab. 47(9-11): 1366-1372 (2007) - 2006
- [j4]Gerald Lucovsky, H. Seo, L. B. Fleming, M. D. Ulrich, J. Lüning, Patrick Lysaght, Gennadi Bersuker:
Intrinsic bonding defects in transition metal elemental oxides. Microelectron. Reliab. 46(9-11): 1623-1628 (2006) - 2005
- [j3]Chadwin D. Young
Probing stress effects in HfO2 gate stacks with time dependent measurements. Microelectron. Reliab. 45(5-6): 806-810 (2005) - 2004
- [j2]Gennadi Bersuker, Jang H. Sim, Chadwin D. Young
Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics. Microelectron. Reliab. 44(9-11): 1509-1512 (2004) - 2001
- [j1]Gennadi Bersuker, Yongjoo Jeon, Howard R. Huff:
Degradation of thin oxides during electrical stress. Microelectron. Reliab. 41(12): 1923-1931 (2001)
Coauthor Index
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