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Nicolo Ronchi
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2020 – today
- 2023
- [c7]Zhuo Chen, Nicolo Ronchi, Amey Walke, Kaustuv Banerjee, Mihaela Ioana Popovici, Kostantine Katcko, Geert Van den Bosch, Maarten Rosmeulen, Valeri Afanas'ev, Jan Van Houdt:
Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering. IMW 2023: 1-4 - 2022
- [c6]Nicolo Ronchi, Lars-Åke Ragnarsson, Umberto Celano, Ben Kaczer, K. Kaczmarek, K. Banerjee, Sean R. C. McMitchell, Geert Van den Bosch, Jan Van Houdt:
A comprehensive variability study of doped HfO2 FeFET for memory applications. IMW 2022: 1-4 - 2021
- [c5]K. Kaczmarek, Marie Garcia Bardon, Y. Xiang, Laurent Breuil, Nicolo Ronchi, Bertrand Parvais, Guido Groeseneken, Jan Van Houdt:
Understanding the memory window in 1T-FeFET memories: a depolarization field perspective. IMW 2021: 1-4 - [c4]Anastasiia Kruv, Sean R. C. McMitchell, Sergiu Clima, Oguzhan O. Okudur, Nicolo Ronchi, Geert Van den Bosch, Mario Gonzalez, Ingrid De Wolf, Jan Van Houdt:
Impact of mechanical strain on wakeup of HfO2 ferroelectric memory. IRPS 2021: 1-6 - [c3]Daisuke Saito, Toshiyuki Kobayashi, Hiroki Koga, Nicolo Ronchi, Kaustuv Banerjee, Yusuke Shuto, Jun Okuno, Kenta Konishi, Luca Di Piazza, Arindam Mallik, Jan Van Houdt, Masanori Tsukamoto, Kazunobu Ohkuri, Taku Umebayashi, Takayuki Ezaki:
Analog In-memory Computing in FeFET-based 1T1R Array for Edge AI Applications. VLSI Circuits 2021: 1-2
2010 – 2019
- 2019
- [c2]Yusuke Higashi, Karine Florent, A. Subirats, Ben Kaczer, Luca Di Piazza, Sergiu Clima, Nicolo Ronchi, Sean R. C. McMitchell, Kaustuv Banerjee, Umberto Celano, Masamichi Suzuki, Dimitri Linten, Jan Van Houdt:
New Insights into the Imprint Effect in FE-HfO2 and its Recovery. IRPS 2019: 1-7 - 2014
- [j2]Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere:
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. Microelectron. Reliab. 54(9-10): 2196-2199 (2014) - [c1]Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso:
Breakdown investigation in GaN-based MIS-HEMT devices. ESSDERC 2014: 377-380
2000 – 2009
- 2009
- [j1]Nicolo Ronchi, Franco Zanon, Antonio Stocco, Augusto Tazzoli, Enrico Zanoni, Gaudenzio Meneghesso:
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test. Microelectron. Reliab. 49(9-11): 1207-1210 (2009)
Coauthor Index
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