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Jung-Hyun Kim 0005
Person information
- affiliation: Hanyang University, Ansan, South Korea
Other persons with the same name
- Jung-Hyun Kim (aka: Junghyun Kim) — disambiguation page
- Jung-Hyun Kim 0001
(aka: Junghyun Kim 0001) — Sogang University, Seoul, South Korea
- Jung-Hyun Kim 0002
- Jung-Hyun Kim 0003
- Jung-Hyun Kim 0004
- Jung-Hyun Kim 0006 (aka: Junghyun Kim 0006) — Sungkyunkwan University, Suwon, Republic of Korea
- Jung-Hyun Kim 0007 (aka: Junghyun Kim 0007) — Rutgers University, New Brunswick, NJ, USA
- Jung Hyun Kim 0008 (aka: Junghyun Kim 0008) — KAIST, Korea
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2020 – today
- 2024
- [j9]Ahnwoo Lee
The Generalization of Stage-Reduced STPS for Low-Loss Unequal 1 × 4 Phased Array Architecture for 5G IoT Applications. IEEE Internet Things J. 11(11): 19978-19987 (2024) - [j8]Sunwoo Lee
A Concurrent 26/48 GHz Low-Noise Amplifier With an Optimal Dual-Band Noise Matching Method Using GaAs 0.15 μm pHEMT. IEEE Trans. Circuits Syst. II Express Briefs 71(3): 1096-1100 (2024) - [j7]Byeongcheol Yoon
4 MHz Electrosurgical Generator System for Wide Load Impedance Range With SiC-Based Full-Bridge Inverter. IEEE Trans. Ind. Electron. 71(1): 338-347 (2024) - 2023
- [j6]Wonwoo Seo
High-Powered RF SOI Switch With Fast Switching Time for TDD Mobile Applications. IEEE Access 11: 7277-7282 (2023) - [j5]Tae Hwan Jang
Wideband Wide Beam-Width Modified Angled Dipole Antenna for 5G Millimeter-Wave IoT Applications. IEEE Access 11: 63324-63332 (2023) - [j4]Sungwoon Hwang
GaN-Based 4-MHz Full-Bridge Electrosurgical Generator Using Zero-Voltage Switching Over Wide Load Impedance Range. IEEE Trans. Biomed. Circuits Syst. 17(5): 1125-1134 (2023) - [j3]Byunghun Ko
A 39/48 GHz Switchless Reconfigurable Low Noise Amplifier Using Common Gate and Coupled-Line-Based Diplexer. IEEE Trans. Circuits Syst. II Express Briefs 70(11): 4028-4032 (2023) - 2022
- [j2]Sunwoo Lee
A W-Band Amplifier With a New Wide-Band Interstage Matching Technique Using Self-Resonance of a Microstrip-Coupled Line. IEEE Access 10: 93894-93900 (2022) - [j1]Hyosung Nam
High-Performance RF Power Amplifier Module Using Optimum Chip-Level Packaging Structure. IEEE Trans. Ind. Electron. 69(6): 5660-5668 (2022)
Coauthor Index
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