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Tsung-Yung Jonathan Chang
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2020 – today
- 2024
- [j11]Hung-Hsi Hsu
, Tai-Hao Wen, Wei-Hsing Huang, Win-San Khwa, Yun-Chen Lo
A Nonvolatile AI-Edge Processor With SLC-MLC Hybrid ReRAM Compute-in-Memory Macro Using Current-Voltage-Hybrid Readout Scheme. IEEE J. Solid State Circuits 59(1): 116-127 (2024) - [j10]De-Qi You
An 8b-Precision 8-Mb STT-MRAM Near-Memory-Compute Macro Using Weight-Feature and Input-Sparsity Aware Schemes for Energy-Efficient Edge AI Devices. IEEE J. Solid State Circuits 59(1): 219-230 (2024) - [j9]Yumito Aoyagi
A 3-nm FinFET 27.6-Mbit/mm2 Single-Port 6T SRAM Enabling 0.48-1.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking. IEEE J. Solid State Circuits 59(4): 1225-1234 (2024) - [j8]Xiaoyu Sun
Efficient Processing of MLPerf Mobile Workloads Using Digital Compute-In-Memory Macros. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 43(4): 1191-1205 (2024) - [c35]Masaru Haraguchi, Yorinobu Fujino, Yoshisato Yokoyama, Ming-Hung Chang, Yu-Hao Hsu, Hong-Chen Cheng, Koji Nii, Yih Wang
15.3 A 3nm FinFET 4.3GHz 21.1Mb/mm2 Double-Pumping 1-Read and 1-Write Pseudo-2-Port SRAM with Folded-Bitline Multi-Bank Architecture. ISSCC 2024: 280-282 - [c34]Yi-Cheng Huang, Shang-Hsuan Liu, Hsu-Shun Chen, Hsin-Chang Feng, Chih-Feng Li, Chou-Ying Yang, Wei-Keng Chang, Chang-Feng Yang, Chun-Yu Wu, Yen-Cheng Lin, Tsung-Tse Yang, Chih-Yang Chang, Wen-Ting Chu, Harry Chuang, Yih Wang
15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm2 Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C. ISSCC 2024: 288-290 - [c33]Ku-Feng Lin, Hiroki Noguchi, Yi-Chun Shih, Perng-Fei Yuh, Yuan-Jen Lee, Tung-Cheng Chang, Sheng-Po Huang, Yu-Fan Lin, Chun-Ying Lee, Yen-Hsiang Huang, Jui-Che Tsai, Saman Adham, Peter Noel, Ramin Yazdi, Marat Gershoig, YangJae Shin, Vineet Joshi, Ted Wong, Meng-Ru Jiang, J. J. Wu, Chun-Tai Cheng, Yu-Jen Wang, Harry Chuang, Yu-Der Chih, Yih Wang
15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 1012 Write Endurance and Integrated Margin-Expansion Schemes. ISSCC 2024: 292-294 - [c32]Hidehiro Fujiwara, Haruki Mori, Wei-Chang Zhao, Kinshuk Khare, Cheng-En Lee, Xiaochen Peng, Vineet Joshi, Chao-Kai Chuang, Shu-Huan Hsu, Takeshi Hashizume, Toshiaki Naganuma, Chen-Hung Tien, Yao-Yi Liu, Yen-Chien Lai, Chia-Fu Lee, Tan-Li Chou, Kerem Akarvardar, Saman Adham, Yih Wang
34.4 A 3nm, 32.5TOPS/W, 55.0TOPS/mm2 and 3.78Mb/mm2 Fully-Digital Compute-in-Memory Macro Supporting INT12 × INT12 with a Parallel-MAC Architecture and Foundry 6T-SRAM Bit Cell. ISSCC 2024: 572-574 - [c31]Tai-Hao Wen, Hung-Hsi Hsu, Win-San Khwa, Wei-Hsing Huang, Zhao-En Ke, Yu-Hsiang Chin, Hua-Jin Wen, Yu-Chen Chang, Wei-Ting Hsu, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Shih-Hsih Teng, Chung-Cheng Chou, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
34.8 A 22nm 16Mb Floating-Point ReRAM Compute-in-Memory Macro with 31.2TFLOPS/W for AI Edge Devices. ISSCC 2024: 580-582 - [c30]Ming-Chieh Huang, Wei Wing Mar, Shankar Kanade, Boris Bai, Aditya Gayatri, Krishna Khairnar, Amy Lai, Yu-Hao Hsu, Hung-Jen Liao, Yih Wang, Tsung-Yung Jonathan Chang:
A 3.3GHz 1024X640 Multi-Bank Single-Port SRAM with Frequency Enhancing Techniques and 0.55V-1.35V Wide Voltage Range Operation in 3nm FinFET for HPC Applications. VLSI Technology and Circuits 2024: 1-2 - [c29]Tomotaka Tanaka, Yuichiro Ishii, Makoto Yabuuchi, Yumito Aoyagi, Masaya Hamada, Kazuto Mizutani, Koji Nii, Hidehiro Fujiwara, Isabel Wang, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang:
A 3nm Fin-FET 19.87-Mbit/mm2 2RW Pseudo Dual-Port 6T SRAM with High-R Wire Tracking and Sequential Access Aware Dynamic Power Reduction. VLSI Technology and Circuits 2024: 1-2 - [c28]De-Qi You, Win-San Khwa, Jui-Jen Wu, Chuan-Jia Jhang, Guan-Yi Lin, Po-Jung Chen, Ting-Chien Chiu, Fang-Yi Chen, Andrew Lee, Yu-Cheng Hung, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
A 22nm Nonvolatile AI-Edge Processor with 21.4TFLOPS/W using 47.25Mb Lossless-Compressed-Computing STT-MRAM Near-Memory-Compute Macro. VLSI Technology and Circuits 2024: 1-2 - 2023
- [j7]Je-Min Hung, Tai-Hao Wen, Yen-Hsiang Huang, Sheng-Po Huang, Fu-Chun Chang, Chin-I Su, Win-San Khwa, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh
8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge Devices. IEEE J. Solid State Circuits 58(1): 303-315 (2023) - [c27]Haruki Mori, Wei-Chang Zhao, Cheng-En Lee, Chia-Fu Lee, Yu-Hao Hsu, Chao-Kai Chuang, Takeshi Hashizume, Hao-Chun Tung, Yao-Yi Liu, Shin-Rung Wu, Kerem Akarvardar, Tan-Li Chou, Hidehiro Fujiwara, Yih Wang
A 4nm 6163-TOPS/W/b $\mathbf{4790-TOPS/mm^{2}/b}$ SRAM Based Digital-Computing-in-Memory Macro Supporting Bit-Width Flexibility and Simultaneous MAC and Weight Update. ISSCC 2023: 132-133 - [c26]Wei-Hsing Huang, Tai-Hao Wen, Je-Min Hung, Win-San Khwa, Yun-Chen Lo, Chuan-Jia Jhang, Hung-Hsi Hsu, Yu-Hsiang Chin, Yu-Chiao Chen, Chuna-Chuan Lo, Ren-Shuo Liu, Kea-Tiong Tang, Chih-Cheng Hsieh, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
A Nonvolatile Al-Edge Processor with 4MB SLC-MLC Hybrid-Mode ReRAM Compute-in-Memory Macro and 51.4-251TOPS/W. ISSCC 2023: 258-259 - [c25]Po-Hao Lee, Chia-Fu Lee, Yi-Chun Shih, Hon-Jarn Lin, Yen-An Chang, Cheng-Han Lu, Yu-Lin Chen, Chieh-Pu Lo, Chung-Chieh Chen, Cheng-Hsiung Kuo, Tan-Li Chou, Chia-Yu Wang, J. J. Wu, Roger Wang, Harry Chuang, Yih Wang
A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity. ISSCC 2023: 494-495 - [c24]Yen-Cheng Chiu, Win-San Khwa, Chung-Yuan Li, Fang-Ling Hsieh, Yu-An Chien, Guan-Yi Lin, Po-Jung Chen, Tsen-Hsiang Pan, De-Qi You, Fang-Yi Chen, Andrew Lee, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
A 22nm 8Mb STT-MRAM Near-Memory-Computing Macro with 8b-Precision and 46.4-160.1TOPS/W for Edge-AI Devices. ISSCC 2023: 496-497 - [c23]Yumito Aoyagi, Makoto Yabuuchi, Tomotaka Tanaka
A 3-nm 27.6-Mbit/mm2 Self-timed SRAM Enabling 0.48 - 1.2 V Wide Operating Range with Far-end Pre-charge and Weak-Bit Tracking. VLSI Technology and Circuits 2023: 1-2 - [c22]Yoshiaki Osada, Takaaki Nakazato, Koji Nii, Jhon-Jhy Liaw, Shien-Yang Michael Wu, Quincy Li, Hidehiro Fujiwara, Hung-Jen Liao, Tsung-Yung Jonathan Chang:
3.7-GHz Multi-Bank High-Current Single-Port Cache SRAM with 0.5V-1.4V Wide Voltage Range Operation in 3nm FinFET for HPC Applications. VLSI Technology and Circuits 2023: 1-2 - [c21]Tai-Hao Wen, Je-Min Hung, Hung-Hsi Hsu, Yuan Wu, Fu-Chun Chang, Chung-Yuan Li, Chih-Han Chien, Chin-I Su, Win-San Khwa, Jui-Jen Wu, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Mon-Shu Ho, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
A 28nm Nonvolatile AI Edge Processor using 4Mb Analog-Based Near-Memory-Compute ReRAM with 27.2 TOPS/W for Tiny AI Edge Devices. VLSI Technology and Circuits 2023: 1-2 - [c20]Wei-Xiang You, Cheng-Yin Wang, Yih Wang
Write-enhanced Single-ended 11T SRAM Enabling Single Bitcell Reconfigurable Compute-in-Memory Employing Complementary FETs. VLSI Technology and Circuits 2023: 1-2 - [c19]Nick Zhang, Young Suk Kim, Peter Hsu, Samsoo Kim, Derek Tao, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li, Tsung-Yung Jonathan Chang:
A 4.24GHz 128X256 SRAM Operating Double Pump Read Write Same Cycle in 5nm Technology. VLSI Technology and Circuits 2023: 1-2 - 2022
- [j6]Yen-Cheng Chiu, Tung-Cheng Chang, Chun-Ying Lee, Je-Min Hung, Kuang-Tang Chang, Cheng-Xin Xue, Ssu-Yen Wu, Hui-Yao Kao, Peng Chen
A 22-nm 1-Mb 1024-b Read Data-Protected STT-MRAM Macro With Near-Memory Shift-and-Rotate Functionality and 42.6-GB/s Read Bandwidth for Security-Aware Mobile Device. IEEE J. Solid State Circuits 57(6): 1936-1949 (2022) - [c18]Hidehiro Fujiwara, Haruki Mori, Wei-Chang Zhao, Mei-Chen Chuang, Rawan Naous, Chao-Kai Chuang, Takeshi Hashizume, Dar Sun, Chia-Fu Lee, Kerem Akarvardar, Saman Adham, Tan-Li Chou, Mahmut Ersin Sinangil, Yih Wang
A 5-nm 254-TOPS/W 221-TOPS/mm2 Fully-Digital Computing-in-Memory Macro Supporting Wide-Range Dynamic-Voltage-Frequency Scaling and Simultaneous MAC and Write Operations. ISSCC 2022: 1-3 - [c17]Je-Min Hung, Yen-Hsiang Huang, Sheng-Po Huang, Fu-Chun Chang, Tai-Hao Wen, Chin-I Su, Win-San Khwa, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices. ISSCC 2022: 1-3 - [c16]Yen-Cheng Chiu, Chia-Sheng Yang, Shih-Hsih Teng, Hsiao-Yu Huang, Fu-Chun Chang, Yuan Wu, Yu-An Chien, Fang-Ling Hsieh, Chung-Yuan Li, Guan-Yi Lin, Po-Jung Chen, Tsen-Hsiang Pan, Chung-Chuan Lo, Win-San Khwa, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Chieh-Pu Lo, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
A 22nm 4Mb STT-MRAM Data-Encrypted Near-Memory Computation Macro with a 192GB/s Read-and-Decryption Bandwidth and 25.1-55.1TOPS/W 8b MAC for AI Operations. ISSCC 2022: 178-180 - [c15]Chia-Fu Lee, Cheng-Han Lu, Cheng-En Lee, Haruki Mori, Hidehiro Fujiwara, Yi-Chun Shih, Tan-Li Chou, Yu-Der Chih, Tsung-Yung Jonathan Chang:
A 12nm 121-TOPS/W 41.6-TOPS/mm2 All Digital Full Precision SRAM-based Compute-in-Memory with Configurable Bit-width For AI Edge Applications. VLSI Technology and Circuits 2022: 24-25 - 2021
- [j5]Tsung-Yung Jonathan Chang, Yen-Huei Chen
A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications. IEEE J. Solid State Circuits 56(1): 179-187 (2021) - [j4]Ziyun Li
RRAM-DNN: An RRAM and Model-Compression Empowered All-Weights-On-Chip DNN Accelerator. IEEE J. Solid State Circuits 56(4): 1105-1115 (2021) - [c14]Cheng-Xin Xue, Je-Min Hung, Hui-Yao Kao, Yen-Hsiang Huang, Sheng-Po Huang, Fu-Chun Chang, Peng Chen, Ta-Wei Liu, Chuan-Jia Jhang, Chin-I Su, Win-San Khwa, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices. ISSCC 2021: 245-247 - [c13]Yu-Der Chih, Po-Hao Lee, Hidehiro Fujiwara, Yi-Chun Shih, Chia-Fu Lee, Rawan Naous, Yu-Lin Chen, Chieh-Pu Lo
An 89TOPS/W and 16.3TOPS/mm2 All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications. ISSCC 2021: 252-254 - 2020
- [c12]Yu-Der Chih, Yi-Chun Shih, Chia-Fu Lee, Yen-An Chang, Po-Hao Lee, Hon-Jarn Lin, Yu-Lin Chen, Chieh-Pu Lo
13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference. ISSCC 2020: 222-224 - [c11]Chung-Cheng Chou, Zheng-Jun Lin, Chien-An Lai, Chin-I Su, Pei-Ling Tseng, Wei-Chi Chen, Wu-Chin Tsai, Wen-Ting Chu, Tong-Chern Ong, Harry Chuang, Yu-Der Chih, Tsung-Yung Jonathan Chang:
A 22nm 96KX144 RRAM Macro with a Self-Tracking Reference and a Low Ripple Charge Pump to Achieve a Configurable Read Window and a Wide Operating Voltage Range. VLSI Circuits 2020: 1-2 - [c10]Zhehong Wang, Ziyun Li, Li Xu
An All-Weights-on-Chip DNN Accelerator in 22nm ULL Featuring 24×1 Mb eRRAM. VLSI Circuits 2020: 1-2
2010 – 2019
- 2019
- [j3]Qing Dong
A 1-Mb 28-nm 1T1MTJ STT-MRAM With Single-Cap Offset-Cancelled Sense Amplifier and In Situ Self-Write-Termination. IEEE J. Solid State Circuits 54(1): 231-239 (2019) - [j2]Yi-Chun Shih
Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub- $\mu$ A Sensing Resolution, and 17.5-nS Read Access Time. IEEE J. Solid State Circuits 54(4): 1029-1038 (2019) - 2018
- [c9]Chien-An Lai, Chung-Cheng Chou, Chi-Hsiang Weng, Zheng-Jun Lin, Pei-Ling Tseng, Chien-Fan Wang, Chih-Chen Wang, Chin-I Su, Wei-Chi Chen, Yu-Cheng Lin, Tong-Chern Ong, Chi Chang, Yu-Der Chih, Tsung-Yung Jonathan Chang:
Logic Process Compatible 40nm 256K×144 Embedded RRAM with Low Voltage Current Limiter and Ambient Compensation Scheme to Improve the Read Window. A-SSCC 2018: 13-16 - [c8]Chung-Cheng Chou, Zheng-Jun Lin, Pei-Ling Tseng, Chih-Feng Li, Chih-Yang Chang, Wei-Chi Chen, Yu-Der Chih, Tsung-Yung Jonathan Chang:
An N40 256K×44 embedded RRAM macro with SL-precharge SA and low-voltage current limiter to improve read and write performance. ISSCC 2018: 478-480 - [c7]Qing Dong, Zhehong Wang, Jongyup Lim
A 1Mb 28nm STT-MRAM with 2.8ns read access time at 1.2V VDD using single-cap offset-cancelled sense amplifier and in-situ self-write-termination. ISSCC 2018: 480-482 - [c6]Yi-Chun Shih, Chia-Fu Lee, Yen-An Chang, Po-Hao Lee, Hon-Jarn Lin, Yu-Lin Chen, Ku-Feng Lin, Ta-Ching Yeh, Hung-Chang Yu, Harry Chuang, Yu-Der Chih, Tsung-Yung Jonathan Chang:
Logic Process Compatible 40NM 16MB, Embedded Perpendicular-MRAM with Hybrid-Resistance Reference, Sub-μA Sensing Resolution, and 17.5NS Read Access Time. VLSI Circuits 2018: 79-80 - [c5]Kaiyuan Yang
A 28NM Integrated True Random Number Generator Harvesting Entropy from MRAM. VLSI Circuits 2018: 171-172 - 2017
- [c4]Chia-Fu Lee, Hon-Jarn Lin, Chiu-Wang Lien, Yu-Der Chih, Tsung-Yung Jonathan Chang:
A 1.4Mb 40-nm embedded ReRAM macro with 0.07um2 bit cell, 2.7mA/100MHz low-power read and hybrid write verify for high endurance application. A-SSCC 2017: 9-12 - [c3]Shau-Yu Chou, Yu-Shiang Chen, Jun-Hao Chang, Yu-Der Chih, Tsung-Yung Jonathan Chang:
11.3 A 10nm 32Kb low-voltage logic-compatible anti-fuse one-time-programmable memory with anti-tampering sensing scheme. ISSCC 2017: 200-201 - 2015
- [j1]Meng-Fan Chang, Jui-Jen Wu, Tun-Fei Chien, Yen-Chen Liu, Ting-Chin Yang, Wen-Chao Shen, Ya-Chin King, Chrong Jung Lin, Ku-Feng Lin, Yu-Der Chih, Tsung-Yung Jonathan Chang:
Low VDDmin Swing-Sample-and-Couple Sense Amplifier and Energy-Efficient Self-Boost-Write-Termination Scheme for Embedded ReRAM Macros Against Resistance and Switch-Time Variations. IEEE J. Solid State Circuits 50(11): 2786-2795 (2015) - 2014
- [c2]Meng-Fan Chang, Jui-Jen Wu, Tun-Fei Chien, Yen-Chen Liu, Ting-Chin Yang, Wen-Chao Shen, Ya-Chin King, Chorng-Jung Lin, Ku-Feng Lin, Yu-Der Chih, Sreedhar Natarajan, Tsung-Yung Jonathan Chang:
19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme. ISSCC 2014: 332-333 - 2013
- [c1]Hung-Chang Yu, Kai-Chun Lin, Ku-Feng Lin, Chin-Yi Huang, Yu-Der Chih, Tong-Chern Ong, Tsung-Yung Jonathan Chang, Sreedhar Natarajan, Luan C. Tran:
Cycling endurance optimization scheme for 1Mb STT-MRAM in 40nm technology. ISSCC 2013: 224-225
Coauthor Index
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