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DRC 2024: College Park, MD, USA
- Device Research Conference, DRC 2024, College Park, MD, USA, June 24-26, 2024. IEEE 2024, ISBN 979-8-3503-7373-8
- Anne S. Verhulst, Aderik Voorspoels, Nihat Akkan, Juliette Gevers, Sybren Santermans, Kherim Willems, Koen M. Martens, Pol Van Dorpe
:
The nanopore-FET: a nanofluidic-nanoelectronic silicon-based device for enabling proteomics. 1-2 - Mansura Sadek, Jesse T. Kemmerling, Ajay Kumar Visvkarma, Rian Guan, Yixin Xiong, Jianan Song, James Spencer Lundh, Karl D. Hobart, Travis J. Anderson, Rongming Chu:
2.3 kV GaN Super-Heterojunction FET for Cryogenic Power Switching. 1-2 - Nilesh Pandey, Yogesh S. Chauhan, Leonard F. Register, Sanjay Kumar Banerjee:
Impact of Multi-Domain on Ferroelectric Tunnel Junction Design Metrics. 1-2 - Shivendra K. Rathaur
Investigation on Positive Bias-Induced Threshold Voltage Instability in GaN-on-Si D-mode Power MIS-HEMTs. 1-2 - Jayatika Sakhuja, Sandip Lashkare, Udayan Ganguly:
Device-Aware Quantization in Resistive Random Access Memory-Based Crossbar Arrays to Account for Device Non-Idealities. 1-2 - Abhishek Kumar
Compact Modeling of Compound Semiconductor Memory ULTRARAM: A Universal Memory Device. 1-2 - Runzhou Chen, Hamdi Mani, Phil Marsh, Richard Al Hadi, Pragya Shrestha, Jason P. Campbell, Christopher Chen, Hao-Yu Chien, Mau-Chung Frank Chang:
A 0.16-3.7GHz Ultra-Compact Noise-Canceling Cryogenic Low-Noise Amplifier at 4 K using 16nm FinFET Technology for Qubit Readout. 1-2 - Juhan Ahn, Saroj Satapathy, Jaydeep P. Kulkarni:
Advancing Low-Voltage Complementary Reconfigurable Field-Effect Transistor Operation with Reduced Schottky Barriers. 1-2 - Chao Tang, Koichi Tamura, Aoi Hamada, Hiroyoshi Kudo, Shinnosuke Uchigasaki, Yuma Takida, Hiroaki Minamide, Tsung-Tse Lin, Akira Satou, Taiichi Otsuji:
Bi2Se3/h-BN Heterostructure Rectenna for fast and Sensitive THz Detection. 1-2 - Mario Bendra, Bernhard Pruckner, R. L. de Orio, Siegfried Selberherr
Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling. 1-2 - Shafin Bin Hamid, Asir Intisar Khan, Huairuo Zhang, Xiangjin Wu, Albert V. Davydov, Eric Pop:
Energy-Efficient Spiking Neural Network Based on Ge4Sb6Te7 Phase-Change Memory Synapses. 1-2 - Bivek Bista, Jiaxuan Wen, Prafful Golani, Fengdeng Liu, Tristan Truttmann, Bharat Jalan, Steven Koester, Georges Pavlidis:
3D Finite Thermal Modelling of SrSnO3 Field Effect Transistors. 1-2 - Simon A. Agnew, William J. Scheideler:
Enhancing Electrostatic Control of High-Speed Liquid-Metal-Printed In2O3 TFTs via Ga Doping. 1-2 - Jian-Sian Li, Hsiao-Hsuan Wan, Chao-Ching Chiang, Timothy Jinsoo Yoo, Meng-Hsun Yu, Fan Ren, Honggyu Kim, Yu-Te Liao, Stephen J. Pearton:
Demonstration of Record Breakdown up to 13.5 kV in NiO/β-Ga2O3 Vertical Rectifiers. 1-2 - Nicholas M. Fata, Yue Ma, Sigurd Wagner, Naveen Verma, James C. Sturm:
Investigation of Self-Heating in ZnO Thin-Film Transistors by In-Situ Gate Resistance Measurement and Effect on Device Mobility Extraction. 1-2 - Matthias Sinnwell
Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz. 1-2 - Sangheon Oh, T. Patrick Xiao, Christopher H. Bennett, Patrick S. Finnegan, Sean R. Bishop, Adam S. Christensen, Adam L. Gross, Sangyong Lee, Andrew Jalbert, Leah Simakas, Joshua D. Sugar, Yiyang Li, Elliot J. Fuller, Sapan Agarwal, A. Alec Talin:
Understanding and Manipulating Electronic Noise in Electrochemical Random Access Memory for Neuromorphic Computing. 1-2 - Faiyaz E. Mullick, Rahul Sreekumar, Md Golam Morshed, Samiran Ganguly, Mircea Stan, Avik W. Ghosh:
Double magnetic tunnel junction based ∑Δ∑ hardware neuron. 1-2 - Md. Hasan Raza Ansari, Nazek El-Atab
A Novel Device Design with Enlarged Storage Region for Retention Enhancement of 1T DRAM Cell. 1-2 - Erbing Hua, Heba Abunahla
Multi-level forming-free HfO2-based ReRAM for energy-efficient computing. 1-2 - Yue Ma, Xiaoyang Ma, Sigurd Wagner, Naveen Verma, James C. Sturm:
Accurate and Compact Small-Signal Modeling of Zinc-Oxide Thin-Film Transistors for Operation in the GHz Regime. 1-2 - Nitupon Dihingia, Aniket Sadashiva, Debanjan Bhowmik, Sandip Mondal:
Spin-coated ALPO-RRAM with Switching Speed < 50 ns and Nonlinearity 0.5. 1-2 - Yiyang Bai, Amita Rawat, Lisa N. McPhillips, M. Saif Islam:
P-on-N versus N-on-P Silicon-Avalanche Photodiode Selection for Visible and Near Infrared Wavelength Applications. 1-2 - Eungkyun Kim, Yu-Hsin Chen, Jimy Encomendero, Debdeep Jena, Huili Grace Xing:
AlN/GaN/AlN HEMTs on Bulk AlN Substrates with High Drain Current Density > 2.8 A/mm and Average Breakdown Field > 2 MV/cm. 1-2 - Yogendra Machhiwar, Pragya Kushwaha, Harshit Agarwal:
Optimization of Source/Drain-epi Region Height in GAA Nanosheet FET for RF Applications. 1-2 - Jiahao Chen, Kenneth Stephenson, Md Abdullah Mamun, Zehuan Wang, Parthasarathy Seshadri, Asif Khan, Chirag Gupta:
Al0.87Ga0.13N/Al0.64Ga0.36N HFET with fT >17 GHz and Vbr > 360 V. 1-2 - S. Pande, Masud Rana SK, Yannick Raffel, Maximilian Lederer, Konrad Seidel, A. Chakravorty, Sourav De, Bhaswar Chakrabarti:
FeFET based LIF Neuron with Learnable Threshold and Time Constant. 1-2 - Xiangjin Wu, Asir Intisar Khan, H.-S. Philip Wong, Eric Pop:
Optimizing TiTe2/Ge4Sb6Te7 Superlattices Towards Low-Power, Fast-Speed, and High-Stability Phase Change Memory. 1-2 - Nishant Saurabh, Paritosh Meihar, Shubham Patil, Udayan Ganguly:
Ultra Low-Cost Epi-Gd2O3 MOSFET Based Novel 1T Frequency Detector. 1-2 - Ashwin Tunga, Junzhe Kang, Ziing Zhao, Ankit Shukla, Wenjuan Zhu, Shaloo Rakheja:
Modeling of Content addressable memory using 2D Reconfigurable Transistors. 1-2 - Boyu Wang, Kamruzzaman Khan, Emre Akso, Henry Collins, Tanmay Chavan, Matthew Guidry, Umesh K. Mishra:
Self-aligned Scaled Planar N-polar GaN HEMTs with Raised Regrowth. 1-2 - Manasa Kaniselvan
Insights behind multi-level conductance transitions in HfOx memristors. 1-2 - John Niroula, Matthew A. Taylor, Qingyun Xie, Pradyot Yadav
Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C. 1-2 - Quyen Tran, John Hayden, Joseph Casamento, Jon-Paul Maria, Thomas N. Jackson:
Boron-Doped Aluminum Nitride Ferroelectric Field-Effect Transistors with ZnO Semiconductor Channel. 1-2 - Lukas Wind, A. Fuchsberger, Masiar Sistani, Walter M. Weber
Three-Input Combinational Logic Gates based on Reconfigurable Si Field-Effect Transistors. 1-2 - Daniele Nazzari, Lukas Wind, Dominik Mayr, Kihye Kim, Sebastian Lellig, Masiar Sistani, Walter M. Weber:
Realization and characterization of HZO-based Schottky-Barrier FETs towards Logic-in-Memory applications. 1-3 - Kun Liang, Haochen Zhang
Improved Electrical Characteristics of GaN-based HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barrier and Passivation Schemes. 1-2 - Jyoti Patel, Navjeet Bagga, Vivek Kumar, S. Dasgupta:
Small Signal Analysis of Nanosheet Transistor for sub-THz Frequency Considering Intersheet Capacitances and Modified Admittance Parameters. 1-2 - Jonathan Schuster, Michael A. Derenge, Jeremy L. Smith, Gregory A. Garrett, Daniel B. Habersat, Brenda VanMil, Dina M. Bower, Shahid Aslam, Tilak Hewagama, Michael Wraback, Anand V. Sampath:
NUV-Enhanced 4H-SiC SACM APDs. 1-2 - J. A. Yang, Eros Reato, Theresia Knobloch, J.-S. Ko, Z. Zhang, Andrew J. Mannix, Krishna Saraswat, Tibor Grasser, Max Christian Lemme, Eric Pop:
Quantifying Defect-Mediated Electron Capture and Emission in Flexible Monolayer WS2 Field-Effect Transistors. 1-2 - Eros Reato, P. Palacios, J. A. Yang, S. Wahid, Marc Jaikissoon, J.-S. Ko, Alwin Daus, M. Saeed, Krishna C. Saraswat, Renato Negra, Eric Pop, Max Christian Lemme:
Nanoscale MoS2 Transistors on Polyimide for Radio-Frequency Operation. 1-2 - Robert K. A. Bennett, Lauren Hoang, Connor Cremers, Andrew J. Mannix, Eric Pop:
Improved Mobility Extraction for Transistors with Gated Contacts. 1-2 - Lars P. Tatum, Xiangwei Kong, Vladimir Marko Stojanovic, Tsu-Jae King Liu:
MOSFET Probabilistic-Bit Behavior. 1-2 - Yuxin Du, Jesse T. Kemmerling, Jianan Song, Keisuke Shinohara, Vivek Mehrotra, Rongming Chu:
Impact of P-GaN ohmic Contact Resistivity on Switching Time of GaN Super-Heterojunction FETs. 1-2 - Shisong Luo, Cheng Chang
GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C. 1-2 - Luqi Zheng, Haitong Li:
CMOS+X Technologies for Neuro-Vector-Symbolic Computing. 1-2 - Shunsuke Shitakata, Hiroshi Oka, Kimihiko Kato, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Takahiro Mori:
Occurrence and Mitigation of Hot Carrier Degradation in Cryogenic MOSFET Operation. 1-2 - Sumaiya Wahid, Eric Pop:
Oxygen Engineering for Positive Bias Stress Stability of Top-Gated Indium Tin Oxide (ITO) Transistors. 1-2 - S. Ghosh, A. Echresh, M. B. Khan, D. Bhattacharya, U. Kentsch, Slawomir Prucnal, V. Vardhan, S. Biswas, S. Hellebust, J. Wenger, J. D. Holmes, Artur Erbe, Yordan M. Georgiev:
Polarity Control in Doped Silicon Junctionless Nanowire Transistor for Sensing Application. 1-2 - Saikat Chakraborty, Jaydeep P. Kulkarni:
Analyzing the Dynamics of Store Mechanism and Data Retention through Transient Simulations in Si/Ge TRAM for Cryogenic Memory Applications. 1-2 - Sukhrob Abdulazhanov, Q. H. Le, David Lehninger, Ayse Sünbül, Thomas Kämpfe, G. Gerlach:
Improved Tunability of BEoL-integrated Hafnium Zirconium Oxide Varactors for mmWave Applications. 1-2 - X. Wen, H. Kasai, K. Lee, M. Noshin, J. Chun, S. Chowdhury:
First Experimental Demonstration of Monolithic Bidirectional Switch Using GaN Current Aperture Vertical Electron Transistor (CAVET). 1-2 - Ateeb Naseer, Keshari Nandan, Amit Agarwal, Somnath Bhowmick, Yogesh S. Chauhan:
Hybrid FETs Based on Monolayer ZrI2 for Energy-Efficient Logic Applications. 1-2 - Atul Sachan, Sandip Mondal:
Solution Process Charge Balancing Capacitive Devices. 1-2 - Shiva T. Konakanchi, Pramey Upadhyaya:
Characterizing Probabilistic Bits with Quantum Spin Defects. 1-2 - Zih-Fei Chen, Ya-Chi Huang, Yu-Shen Lai, Yi-Ting Wu, Cheng-Ming Huang, Meng-Hsueh Chiang:
Fabrication of Hybrid Fin/Planar LDMOS with Modulation Gate. 1-2 - S. Roy, S. Pande, Masud Rana SK, Ela Bhattacharya, Bhaswar Chakrabarti:
Demonstration of an oscillatory neuron using SiOx-based memristive switches. 1-2 - Anthony Cabanillas, Hemendra Nath Jaiswal, Anindita Chakravarty, Asma Ahmed, Yu Fu, Chu Te Chen
Inherent Photogating in MoTe2 Transistors with Van der Waals Contacts. 1-2 - Junmo Lee, Sunbin Deng, Jungyoun Kwak, Minji Shon, Suman Datta, Shimeng Yu:
Optimization of Backside of Silicon-Compatible High Voltage Superlattice Capacitor for 12V-to-6V On-Chip Voltage Conversion. 1-2 - Z. Hao, T. Shaw, M. Hatefipour, W. Strickland, B. H. Elfeky, D. Langone, J. Shabani, S. Shankar:
Al-InAs Superconductor-Semiconductor Josephson Junction Parametric Amplifier. 1-2 - Dharmendra Kumar Singh, Arjun Shetty, Sandip Mondal:
Thermally Activated Fail Bit Counts of Single and Multi-Level NAND flash Memory. 1-2 - Nilesh Pandey, Yogesh S. Chauhan, Leonard F. Register, Sanjay Kumar Banerjee:
Impact of Multi-Domain Microscopic Interactions on Magnetic Tunnel Junction's Static and Transient Characteristics. 1-2 - Youngjin Shin, W. Chern, N. Karaulac, A. Akinwande:
Negative Differential Resistance Regime of Field Emitter Arrays. 1-2 - Zili Tang, Mohammad Shafiqul Islam, Sigurd Wagner, Naveen Verma, James C. Sturm:
Reduction of Series Resistance in Top-Gate ZnO Thin-Film Transistors by Air Exposure and Oxygen Plasma Treatment. 1-2 - Hui-Ping Chang, Deji Akinwande, Jean Anne C. Incorvia:
Monolayer hBN RRAM with High DC Endurance and Low Operation Voltages using an Oxidized Top Electrode. 1-2 - Umeshwarnath Surendranathan, Farzana Hoque, Aleksandar Milenkovic, Biswajit Ray:
Technology Scaling Effects on SRAM Data Remanence. 1-2 - Mukul Kumar, Kuang-Yu Hsueh, Yun-Jie Huang, Chao-Hsin Wu:
A Darlington Transistor Using Cascaded n-p-n Light-Emitting Transistors for Temperature Sensor Applications. 1-2 - Davide G. F. Lombardo, Mamidala Saketh Ram, Tommaso Stecconi, Wooseok Choi, Antonio La Porta, Donato Francesco Falcone, Bert J. Offrein, Valeria Bragaglia:
Read Noise Analysis in Analog Conductive-Metal-Oxide/HfOx ReRAM Devices. 1-2
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