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Global Patent Index - EP 4441799 A1

EP 4441799 A1 20241009 - PASSIVATION METHOD

Title (en)

PASSIVATION METHOD

Title (de)

PASSIVIERUNGSVERFAHREN

Title (fr)

PROCEDE DE PASSIVATION

Publication

EP 4441799 A1 20241009 (FR)

Application

EP 22821485 A 20221122

Priority

  • FR 2112689 A 20211129
  • EP 2022082868 W 20221122

Abstract (en)

[origin: WO2023094403A1] Passivation method comprising the successive steps of: a) providing a structure comprising: - a substrate (1) based on crystalline silicon and having opposing first and second surfaces (10, 11); - first and second oxide films (2, 3); b) applying ultraviolet radiation to the structure, in an ozone atmosphere, so that the first oxide film (2') has: - a thickness strictly greater than that of the second oxide film (3), and/or - a composition closer to the stoichiometric compound; c) forming first and second layers of polysilicon (4, 5) on the first and second oxide films (2', 3), respectively, and comprising phosphorus atoms and boron atoms, respectively ; d) applying a heat treatment at a temperature greater than or equal to the electrical activation temperature of the boron atoms so as to electrically activate the phosphorus atoms and boron atoms at the same time.

IPC 8 full level

H01L 31/18 (2006.01)

CPC (source: EP)

H10F 10/165 (2025.01); H10F 71/128 (2025.01); H10F 77/311 (2025.01)

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC ME MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA

Designated validation state (EPC)

KH MA MD TN

DOCDB simple family (publication)

WO 2023094403 A1 20230601; EP 4441799 A1 20241009; FR 3129769 A1 20230602; FR 3129769 B1 20240913

DOCDB simple family (application)

EP 2022082868 W 20221122; EP 22821485 A 20221122; FR 2112689 A 20211129