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Global Patent Index - EP 2888765 A2

EP 2888765 A2 20150701 - METHOD FOR PRODUCING THE ELECTRICAL CONTACTS OF A SEMICONDUCTOR DEVICE

Title (en)

METHOD FOR PRODUCING THE ELECTRICAL CONTACTS OF A SEMICONDUCTOR DEVICE

Title (de)

VERFAHREN ZUR HERSTELLUNG DER ELEKTRISCHEN KONTAKTE EINES HALBLEITERBAUELEMENTS

Title (fr)

PROCEDE DE REALISATION DE CONTACTS ELECTRIQUES D'UN DISPOSITIF SEMI-CONDUCTEUR

Publication

EP 2888765 A2 20150701 (FR)

Application

EP 13756362 A 20130822

Priority

  • FR 1257968 A 20120823
  • EP 2013067443 W 20130822

Abstract (en)

[origin: WO2014029836A2] The invention relates to a method for producing an electrical contact (114) of a semiconductor device (100), said method comprising the following steps: depositing an electrically conductive and optically transparent layer (104) on a face (102) of the device; depositing first and second dielectric layers (106, 108) on the aforementioned layer, in which the second dielectric layer can be selectively engraved by laser; performing selective laser engraving on the second dielectric layer, such as to form a first opening; producing a second opening, aligned with the first opening, in the first dielectric layer; depositing an electrically conductive material on the electrically conductive and optically transparent layer through the second opening, such that portions of the electrically conductive material are deposited on the second dielectric layer around the first opening; engraving portions of the second dielectric layer that are not covered by the portions of electrically conductive material.

IPC 8 full level

H01L 31/0224 (2006.01)

CPC (source: EP US)

H01L 31/02168 (2013.01 - EP US); H01L 31/022425 (2013.01 - EP US); H01L 31/022475 (2013.01 - EP US); H01L 31/022483 (2013.01 - EP US); H01L 31/1884 (2013.01 - EP US); Y02E 10/50 (2013.01 - EP US)

Citation (search report)

See references of WO 2014029836A2

Designated contracting state (EPC)

AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

Designated extension state (EPC)

BA ME

DOCDB simple family (publication)

WO 2014029836 A2 20140227; WO 2014029836 A3 20140417; EP 2888765 A2 20150701; FR 2994767 A1 20140228; JP 2015527744 A 20150917; US 2015243833 A1 20150827

DOCDB simple family (application)

EP 2013067443 W 20130822; EP 13756362 A 20130822; FR 1257968 A 20120823; JP 2015527917 A 20130822; US 201314422243 A 20130822